Light-extraction enhancement by cavity array-textured n-polar GaN surfaces ablated using a KrF laser

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Title:	Light-extraction enhancement by cavity array-textured n-polar GaN surfaces ablated using a KrF laser
Authors:	劉正毓;Chang, You-Hsien;Lin, Yi-Chin;Liu, Yen-Shuo;Liu, Cheng-Yi
Contributors:	工學院化學工程與材料工程學系
Keywords:	Cavity resonators;KrF excimer laser;Laser ablation;laser lift-off;light emitting diode;Light emitting diodes;light extraction;Surface morphology;Surface treatment;Vertical cavity surface emitting lasers;wet etching
Date:	2012-11-26
Issue Date:	2026-04-21 14:03:07 (UTC+8)
Publisher:	Institute of Electrical and Electronics Engineers Inc.;IEEE
Abstract:	摘要： The creation of KOH-etched pyramidal patterns on the N-GaN surface is considered to be the most effective texturing method for improving the light-extraction efficiency of GaN LEDs. Using KrF-laser ablation, concave downward cavities are formed on the N-GaN surface. This letter demonstrates that KrF-laser-ablated cavities enhance the light-extraction efficiency of the KOH-etched pyramidal N-GaN surface by 25%. With further etching by KOH, the curved-surface sidewall of laser-ablated cavities do not form pyramids; instead, relatively large inclined facet sidewalls are formed in the laser-ablated cavities. We believe that these inclined facet sidewalls in laser-ablated cavities further enhance the light-extraction efficiency of KOH-etched pyramidal N-GaN surfaces. 其他題名： LPT 出版者： IEEE 出版日期： 2012-11-15 出處： IEEE photonics technology letters, 2012-11, Vol.24 (22), p.2013-2015 資源來源： IEEE Electronic Library (IEL) 識別號： ISSN: 1041-1135 識別號： EISSN: 1941-0174 識別號： DOI: 10.1109/LPT.2012.2217948 識別號： CODEN: IPTLEL
Appears in Collections:	[Department of Chemical and Materials Engineering] journal & Dissertation

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