Evaluation of diffusion barrier between pure Sn and Te

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Title:	Evaluation of diffusion barrier between pure Sn and Te
Authors:	吳子嘉;Ko, Chang-Yen;Wu, Albert T.
Contributors:	工學院化學工程與材料工程學系
Keywords:	Annealing;Characterization and Evaluation of Materials;Chemistry and Materials Science;Electrical engineering;Electronics and Microelectronics;High temperature physics;Instrumentation;Kinetics;Materials Science;Optical and Electronic Materials;Soldering;Solid State Physics
Date:	2012-12-01
Issue Date:	2026-04-21 14:03:36 (UTC+8)
Publisher:	Springer New York;Boston: Springer US
Abstract:	摘要： An electroless Ni layer is often chosen as an effective diffusion barrier in thermoelectric modules. Thermal aging can form a thick layer of NiTe. This study investigates the growth kinetics of NiTe intermetallic compounds (IMCs). The apparent activation energy was determined to be 70.9 kJ/mol. Ni/Co was also selected as an alternative barrier because Co-Te did not form IMCs. Results show that Co can effectively suppress the voids formed at the interfaces. After high-temperature annealing, a very thin Ni-Te IMC formed between Co-P and Te. 其他題名： Journal of Elec Materi 出版者： Boston: Springer US 出版日期： 2012-12-01 出處： Journal of electronic materials, 2012-12, Vol.41 (12), p.3320-3324 資源來源： EBSCOhost OmniFile Full Text Select 版權： TMS 2012 識別號： ISSN: 0361-5235 識別號： EISSN: 1543-186X 識別號： DOI: 10.1007/s11664-012-2269-1 識別號： CODEN: JECMA5
Appears in Collections:	[Department of Chemical and Materials Engineering] journal & Dissertation

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