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    Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/100472


    Title: High-performance bottom-contact organic thin-film transistors based on benzo[ d, d ′]thieno[3,2-b;4,5-b ′]dithiophenes (BTDTs) derivatives
    Authors: 陳銘洲;Huang, Peng-Yi;Chen, Liang-Hsiang;Kim, Choongik;Chang, Hsiu-Chieh;Liang, You-jhih;Feng, Chieh-Yuan;Yeh, Chia-Ming;Ho, Jia-Chong;Lee, Cheng-Chung;Chen, Ming-Chou
    Contributors: 理學院化學學系
    Keywords: chemical compounds;equipment performance;films (materials);microstructure;semiconductors
    Date: 2012-12-26
    Issue Date: 2026-04-21 14:03:51 (UTC+8)
    Publisher: American Chemical Society;United States: American Chemical Society
    Abstract: 摘要: Three benzo[d,d′]thieno[3,2-b;4,5-b′]dithiophene (BTDT) derivatives, end-functionalized with benzothiophenyl (BT-BTDT; 2), benzothieno[3,2-b]thiophenyl (BTT-BTDT; 3), and benzo[d,d′]thieno[3,2-b;4,5-b′]dithiophenyl (BBTDT; 4), were prepared for bottom-contact/bottom-gate organic thin-film transistors (OTFTs). An improved one-pot [2 + 1 + 1] synthetic method of BTDT with improved synthetic yield was achieved, which enabled the efficient realization of new BTDT-based semiconductors. All of the BTDT compounds exhibited high performance p-channel characteristics with carrier mobilities as high as 0.34 cm2/(V s) and a current on/off ratio of 1 × 107, as well as enhanced ambient stability. The device characteristics have been correlated with the film morphologies and microstructures of the corresponding compounds.
    其他題名: ACS Appl. Mater. Interfaces
    出版者: United States: American Chemical Society
    出版日期: 2012-12-26
    出處: ACS Applied Materials & Interfaces, 2012-12, Vol.4 (12), p.6992-6998
    資源來源: American Chemical Society Journals
    版權: Copyright © 2012 American Chemical Society
    識別號: ISSN: 1944-8244
    識別號: ISSN: 1944-8252
    識別號: EISSN: 1944-8252
    識別號: DOI: 10.1021/am3022448
    識別號: PMID: 23218927
    Appears in Collections:[Department of Chemistry] journal & Dissertation

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