Interfacial reactions between diffusion barriers and thermoelectric materials under current stressing

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Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/100476

Title:	Interfacial reactions between diffusion barriers and thermoelectric materials under current stressing
Authors:	吳子嘉;Lo, Li-Chen;Wu, Albert T.
Contributors:	工學院化學工程與材料工程學系
Keywords:	Biotechnology;Characterization and Evaluation of Materials;Chemistry and Materials Science;Electrical engineering;Electronics and Microelectronics;Instrumentation;Kinetics;Materials Science;Optical and Electronic Materials;Solid State Physics
Date:	2012-12-01
Issue Date:	2026-04-21 14:03:59 (UTC+8)
Publisher:	Springer New York;Boston: Springer US
Abstract:	摘要： This study investigates the stability of the interfaces between an n -type thermoelectric material, Bi 2 Te 3 , and pure tin solders in a thermoelectric module. The module was stressed by a current at elevated temperatures. A map of the failure criteria of the module was constructed. Ni was used as the diffusion barrier between the solder and the thermoelectric materials, but it reacted with these materials and formed intermetallic compound (IMC) layers. The phase transformation of the IMC layers formed voids at the interfaces and reduced the strength of the joints. Current stressing promoted the formation of IMC. The kinetics of the compound growth was studied. The results suggested that the formation of NiTe IMC was successfully inhibited, but the Bi 4 Te 5 compound grew from an infinitely adaptive series of (Bi 2 ) m (Bi 2 Te 3 ) n because of the depletion of Te. 其他題名： Journal of Elec Materi 出版者： Boston: Springer US 出版日期： 2012-12 出處： Journal of electronic materials, 2012-12, Vol.41 (12), p.3325-3330 資源來源： EBSCOhost OmniFile Full Text Select 版權： TMS 2012 識別號： ISSN: 0361-5235 識別號： EISSN: 1543-186X 識別號： DOI: 10.1007/s11664-012-2275-3 識別號： CODEN: JECMA5
Appears in Collections:	[Department of Chemical and Materials Engineering] journal & Dissertation

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