摘要： Bistable resistive switching characteristics obtained using a supramolecular hybrid route to hydrogen-bonded block copolymers (BCP) and graphene oxide (GO) as charge storage materials are reported for write-once-read-many-times (WORM) memory devices. A supramolecular approach to block copolymers:graphene oxide composites provides the electrical switching behavior for write-once-read-many-times (WORM) memory applications. 出版日期： 2011-12-05 資源來源： Royal Society of Chemistry 識別號： ISSN: 1359-7345 識別號： EISSN: 1364-548X 識別號： DOI: 10.1039/c1cc15945c
