Uniform SiGe/Si quantum well nanorod and nanodot arrays fabricated using nanosphere lithography

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Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/100577

Title:	Uniform SiGe/Si quantum well nanorod and nanodot arrays fabricated using nanosphere lithography
Authors:	鄭紹良;Chang, Hung-Tai;Wu, Bo-Lun;Cheng, Shao-Liang;Lee, Tu;Lee, Sheng-Wei
Contributors:	工學院化學工程與材料工程學系
Keywords:	Chemistry and Materials Science;Lithography;Materials Science;Molecular Medicine;Nano Express;Nanochemistry;Nanoscale Science and Technology;Nanotechnology;Nanotechnology and Microengineering
Date:	2013-01-01
Issue Date:	2026-04-21 14:07:13 (UTC+8)
Publisher:	Springer New York;New York: Springer New York
Abstract:	摘要： This study fabricates the optically active uniform SiGe/Si multiple quantum well (MQW) nanorod and nanodot arrays from the Si 0.4 Ge 0.6 /Si MQWs using nanosphere lithography (NSL) combined with the reactive ion etching (RIE) process. Compared to the as-grown sample, we observe an obvious blueshift in photoluminescence (PL) spectra for the SiGe/Si MQW nanorod and nanodot arrays, which can be attributed to the transition of PL emission from the upper multiple quantum dot-like SiGe layers to the lower MQWs. A possible mechanism associated with carrier localization is also proposed for the PL enhancement. In addition, the SiGe/Si MQW nanorod arrays are shown to exhibit excellent antireflective characteristics over a wide wavelength range. These results indicate that SiGe/Si MQW nanorod arrays fabricated using NSL combined with RIE would be potentially useful as an optoelectronic material operating in the telecommunication range. 其他題名： Nanoscale Res Lett 出版者： New York: Springer New York 出版日期： 2013-08-08 出處： Nanoscale research letters, 2013-08, Vol.8 (1), p.349-349, Article 349 資源來源： Springer Nature Link (Free) 版權： Chang et al.; licensee Springer. 2013. This article is published under license to BioMed Central Ltd. This is an Open Access article distributed under the terms of the Creative Commons Attribution License ( ), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. 版權： The Author(s) 2013 版權： Copyright ©2013 Chang et al.; licensee Springer. 2013 Chang et al.; licensee Springer. 識別號： ISSN: 1556-276X 識別號： ISSN: 1931-7573 識別號： EISSN: 1556-276X 識別號： DOI: 10.1186/1556-276X-8-349 識別號： PMID: 23924368
Appears in Collections:	[化學工程與材料工程學系 ] 期刊論文

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