Decoupling free-carriers contributions from oxygen-vacancy and cation-substitution in extrinsic conducting oxides

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題名:	Decoupling free-carriers contributions from oxygen-vacancy and cation-substitution in extrinsic conducting oxides
作者:	劉正毓;Lin, Y. H.;Liu, Y. S.;Lin, Y. C.;Wei, Y. S.;Liao, K. S.;Lee, K. R.;Lai, J. Y.;Chen, H. M.;Jean, Y. C.;Liu, C. Y.
貢獻者:	工學院化學工程與材料工程學系
關鍵詞:	Carrier density;Conduction;Decoupling;Dopants;Electronic Structure and Transport;Oxides;Separation;Spectroscopy;Thin films
日期:	2013-01-21
上傳時間:	2026-04-21 14:07:42 (UTC+8)
出版者:	American Institute of Physics;United States: American Institute of Physics
摘要:	摘要： The intrinsic oxygen-vacancies and the extrinsic dopants are two major fundamental free-carrier sources for the extrinsic conducting oxides, such as Sn-doped In2O3. Yet, the individual contributions of the above two free-carrier sources to the total carrier concentrations have never been unraveled. A carrier-concentration separation model is derived in this work, which can define the individual contributions to the total carrier concentration from the intrinsic oxygen-vacancies and the extrinsic dopants, separately. The individual contributions obtained from the present carrier-concentration separation model are verified by the two-state trapping model, photoluminescence, and positron annihilation lifetime (PAL) spectroscopy. In addition, the oxygen-vacancy formation energy of the Sn:In2O3 thin film is determined to be 0.25 eV by PAL spectroscopy. 其他題名： J Appl Phys 出版者： United States: American Institute of Physics 出版日期： 2013-01-21 出處： Journal of applied physics, 2013-01, Vol.113 (3), p.33706 資源來源： AIP Publishing Journals 版權： Copyright © 2013 American Institute of Physics 2013 American Institute of Physics 識別號： ISSN: 0021-8979 識別號： ISSN: 1089-7550 識別號： ISSN: 1520-8850 識別號： EISSN: 1089-7550 識別號： EISSN: 0021-8979 識別號： DOI: 10.1063/1.4776781 識別號： PMID: 23405036
顯示於類別:	[化學工程與材料工程學系 ] 期刊論文

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