Multilevel nonvolatile transistor memories using a star-shaped poly((4-diphenylamino)benzyl methacrylate) gate electret

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Title:	Multilevel nonvolatile transistor memories using a star-shaped poly((4-diphenylamino)benzyl methacrylate) gate electret
Authors:	劉振良;Chiu, Yu-Cheng;Liu, Cheng-Liang;Lee, Wen-Ya;Chen, Yougen;Kakuchi, Toyoji;Chen, Wen-Chang
Contributors:	工學院化學工程與材料工程學系
Keywords:	639/301/1005/1008;639/301/119/1000;639/301/923/1028;Biomaterials;Chemistry and Materials Science;Energy Systems;Materials Science;Optical and Electronic Materials;original-article;Structural Materials;Surface and Interface Science;Thin Films
Date:	2013-02-01
Issue Date:	2026-04-21 14:08:32 (UTC+8)
Publisher:	Nature Publishing Group;London: Springer Science and Business Media LLC
Abstract:	摘要： Multilevel nonvolatile transistor memories were fabricated with inserted electret dielectric of star-shaped poly((4-diphenylamino)benzyl methacrylate). The devices could be controllably charged and retain the digital states even when the supply voltage was removed. The multilevel data storage characteristics by applying different gate voltages suggested novel ‘write-many-read-many memory’ behaviors. 其他題名： NPG Asia Mater 出版者： London: Springer Science and Business Media LLC 出版日期： 2013-02-01 出處： NPG Asia Materials, 2013-02, Vol.5 (2), p.e35-35 資源來源： Springer Nature Link Open access journals 版權： The Author(s) 2013 識別號： ISSN: 1884-4049 識別號： ISSN: 1884-4057 識別號： EISSN: 1884-4057 識別號： DOI: 10.1038/am.2012.64
Appears in Collections:	[Department of Chemical and Materials Engineering] journal & Dissertation

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