Optical and electrical characterization of transparent conductive Gd-doped AZO thin films

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題名:	Optical and electrical characterization of transparent conductive Gd-doped AZO thin films
作者:	劉正毓;Liu, Yen-Shuo;Lin, Yung-Shun;Wei, Yu-Shan;Wei, Chia-Ying;Lee, Po-Ming;Liu, Cheng-Yi
貢獻者:	工學院化學工程與材料工程學系
關鍵詞:	Annealing;Azo;Burstein-Moss effect;Carrier density;Doping;Electrical resistivity;figure of merit;Gd-doped AZO;near UV regime;Oxides;Thin films;Transmittance
日期:	2013-03-01
上傳時間:	2026-04-21 14:09:05 (UTC+8)
出版者:	Wiley-VCH Verlag;Berlin: WILEY-VCH Verlag
摘要:	摘要： The Gd‐doped Al‐doped Zn oxide (AZO) thin films are prepared and characterized in this study. The findings show that when the Gd doping concentration exceeded a threshold of approximately 3–5 wt%, the resistivity of the Gd:AZO thin film was reduced to a point that was lower than the resistivity of the pure AZO thin film. The reduction in resistivity was caused by the increase of the carrier concentration. This study proposes that the increase in carrier concentration was caused by the additional Gd3+Zn2+ substitution reaction. After performing 10 wt% Gd doping, the transmittance of the Gd:AZO thin film in the near UV region was increased. Following an annealing process at 200 °C, the transmittance of the annealed 100‐nm Gd:AZO (10 wt%) thin films was over 80% at the 375 nm wavelength, which was approximately 40% higher than that of the annealed pure AZO thin film. The 600‐nm Gd:AZO (10 wt%) annealed at 200 °C is found to have the best figure of merit value (0.24 ohm−1) at 375 nm (near UV regime) among all studied Gd:AZO (10 wt%) thin films in this study. 其他題名： Phys. Status Solidi A 出版者： Berlin: WILEY-VCH Verlag 出版日期： 2013-03 出處： Physica status solidi. A, Applications and materials science, 2013-03, Vol.210 (3), p.600-606 資源來源： Wiley Online Library Journals 版權： Copyright © 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim 版權： Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim 識別號： ISSN: 1862-6300 識別號： EISSN: 1862-6319 識別號： DOI: 10.1002/pssa.201228488
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