Switching mode and mechanism in binary oxide resistive random access memory using Ni electrode

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Title:	Switching mode and mechanism in binary oxide resistive random access memory using Ni electrode
Authors:	周正堂;Lin, Kuan-Liang;Hou, Tuo-Hung;Lee, Yao-Jen;Chang, Jhe-Wei;Lin, Jun-Hung;Shieh, Jiann;Chou, Cheng-Tung;Lei, Tan-Fu;Chang, Wen-Hsiung;Jang, Wen-Yueh;Lin, Chen-Hsi
Contributors:	工學院化學工程與材料工程學系
Keywords:	Aluminum oxide;Electrodes;Filaments;Formations;Hafnium oxide;Nickel;Oxides;Secondary ion mass spectrometry
Date:	2013-03-01
Issue Date:	2026-04-21 14:09:13 (UTC+8)
Publisher:	Japan Society of Applied Physics;The Japan Society of Applied Physics
Abstract:	摘要： Resistive-switching (RS) modes in different CMOS-compatible binary oxides have been shown to be governed by the interplay with the Ni top electrode. Unipolar RS and metallic low-resistance state in polycrystalline HfO 2 and ZrO 2 are distinct from the preferential bipolar RS and semiconductive low-resistance state in amorphous Al 2 O 3 and SiO 2 . Backside secondary ion mass spectrometry (SIMS) has shown the formation of Ni filaments in HfO 2 , in contrast to the formation of oxygen-vacancy filaments in Al 2 O 3 . The differences have been explained by strong dependence of Ni migration on the oxide crystallinity. Additionally, the RS mode can be further tailored using bilayer structures. The oxide layer next to the Si bottom electrode and its tendency of forming Ni filaments play significant roles in unipolar RS in the bilayer structures, in support of the conical-shape Ni filament model where the connecting and rupture of filaments for unipolar RS occur at the smallest diameter near the bottom electrodes. 出版者： The Japan Society of Applied Physics 出版日期： 2013-03-01 出處： Japanese Journal of Applied Physics, 2013-03, Vol.52 (3), p.031801-031801-5 資源來源： Institute of Physics Journals 識別號： ISSN: 0021-4922 識別號： EISSN: 1347-4065 識別號： DOI: 10.7567/jjap.52.031801
Appears in Collections:	[Department of Chemical and Materials Engineering] journal & Dissertation

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