Surface-engineered growth of AgIn5S8 crystals

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題名:	Surface-engineered growth of AgIn5S8 crystals
作者:	李岱洲;Lai, Chia-Hung;Chiang, Ching-Yeh;Lin, Po-Chang;Yang, Kai-Yu;Hua, Chi Chung;Lee, Tai-Chou
貢獻者:	工學院化學工程與材料工程學系
關鍵詞:	crystal structure;crystals;energy;glass;Glass - chemistry;Indium - chemistry;industry;Microscopy, Electron, Scanning;Particle Size;photocatalysis;Photoelectron Spectroscopy;physicochemical properties;Semiconductors;Silanes - chemistry;silicon;Silicon - chemistry;Silver - chemistry;sulfides;Sulfur - chemistry;Surface Properties;Temperature
日期:	2013-05-08
上傳時間:	2026-04-21 14:10:35 (UTC+8)
出版者:	American Chemical Society;United States: American Chemical Society
摘要:	摘要： The growth of semiconductor crystals and thin films plays an essential role in industry and academic research. Considering the environmental damage caused by energy consumption during their fabrication, a simpler and cheaper method is desired. In fact, preparing semiconductor materials at lower temperatures using solution chemistry has potential in this research field. We found that solution chemistry, the physical and chemical properties of the substrate surface, and the phase diagram of the multicomponent compound semiconductor have a decisive influence on the crystal structure of the material. In this study, we used self-assembled monolayers (SAMs) to modify the silicon/glass substrate surface and effectively control the density of the functional groups and surface energy of the substrates. We first employed various solutions to grow octadecyltrichlorosilane (OTS), 3-mercaptopropyl-trimethoxysilane (MPS), and mixed OTS–MPS SAMs. The surface energy can be adjusted between 24.9 and 50.8 erg/cm2. Using metal sulfide precursors in appropriate concentrations, AgIn5S8 crystals can be grown on the modified substrates without any post-thermal treatment. We can easily adjust the nucleation in order to vary the density of AgIn5S8 crystals. Our current process can achieve AgIn5S8 crystals of a maximum of 1 μm in diameter and a minimum crystal density of approximately 0.038/μm2. One proof-of-concept experiment demonstrated that the material prepared from this low temperature process showed positive photocatalytic activity. This method for growing crystals can be applied to the green fabrication of optoelectronic materials. 其他題名： ACS Appl. Mater. Interfaces 出版者： United States: American Chemical Society 出版日期： 2013-05-08 出處： ACS applied materials & interfaces, 2013-05, Vol.5 (9), p.3530-3540 資源來源： American Chemical Society Publications 版權： Copyright © 2013 American Chemical Society 識別號： ISSN: 1944-8244 識別號： ISSN: 1944-8252 識別號： EISSN: 1944-8252 識別號： DOI: 10.1021/am401121w 識別號： PMID: 23551172
顯示於類別:	[化學工程與材料工程學系 ] 期刊論文

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