Springer Netherlands;Dordrecht: Springer Science and Business Media LLC
摘要:
摘要： This study investigates the warpage and stress relaxation of a transferred GaN epi-layer on electroplated Cu substrates. Varying the electroplating current-density makes it possible to manipulate the crystallographic structure and hardness of the electroplated Cu substrate. A harder electroplated Cu substrate (with the (111) preferorientation) has less warpage and more stress relaxation in the transferred GaN wafer. An intrinsic compressive stress appeared in the electroplated Cu substrate, which helped to relieve the compressive stress of the transferred GaN epi-layer on the electroplated Cu substrate. 其他題名： Electron. Mater. Lett 出版者： Dordrecht: Springer Science and Business Media LLC 出版日期： 2013-07 出處： Electronic Materials Letters, 2013, 9(4), , pp.441-444 版權： The Korean Institute of Metals and Materials and Springer Science+Business Media Dordrecht 2013 識別號： ISSN: 1738-8090 識別號： EISSN: 2093-6788 識別號： DOI: 10.1007/s13391-013-0029-x
