摘要： The ratio of ZnS to AgInS2 is usually adjusted to tune the band gaps of this quaternary (Ag–In–Zn)S semiconductor to increase photocatalytic activity. In this study, the [Zn]/[Ag] ratio was kept constant. The hydrogen production rate was enhanced by increasing the content of indium sulfide. Compared to the steady H2 evolution rate obtained with equal moles of indium and silver ([In]/[Ag] = 1, 0.64 L/m2 h), that obtained with In-rich photocatalyst ([In]/[Ag] = 2, 3.75 L/m2 h) is over 5.86 times higher. The number of nanostep structures, on which the Pt cocatalysts were loaded by photodeposition, increased with the content of indium. The indium-rich samples did not induce phase separation between AgxInxZnyS2x+y and AgIn5S8, instead forming a single-phase solid solution. Although the photocatalytic activity decreased slightly for bare In-rich photocatalysts, Pt loading played a critical role in the hydrogen production rate. This study demonstrates the significant effect of In2S3 on this unique (Ag–In–Zn)S photocatalyst. •Single-phase In-rich (Ag–In–Zn)S particles were prepared using wet chemistry method.•Hydrogen production rate increases as a function of In content.•More nanostep structures were observed for the In-rich sample.•Nanostep structures and Pt cocatalyst promote photocatalytic activity. 出版者： Kidlington: Elsevier Ltd 出版日期： 2013-07-09 出處： International journal of hydrogen energy, 2013-07, Vol.38 (20), p.8254-8262 資源來源： Elsevier ScienceDirect Journals Complete 版權： 2013 Hydrogen Energy Publications, LLC. 版權： 2014 INIST-CNRS 識別號： ISSN: 0360-3199 識別號： EISSN: 1879-3487 識別號： DOI: 10.1016/j.ijhydene.2013.04.125 識別號： CODEN: IJHEDX
