Institute of Electrical and Electronics Engineers Inc.;IEEE
摘要:
摘要： Creating a pyramidal structure on an n-GaN surface is considered the most effective approach for maximizing light extraction of n-side-up GaN-based light-emitting diodes (LEDs). This letter shows that the light extraction efficiency of a pyramidal n-GaN surface can be further enhanced by growing ZnO nano-rods (NRs) specifically on the tips of the pyramids on the n-GaN surface. Using tip-only ZnO NRs, the light-output power of an n-side-up LED with a pyramidal n-GaN surface can be further enhanced by 49.6% at 250 mA. This improved light extraction efficiency is due to the multiple facets on the ZnO NRs. 其他題名： LPT 出版者： IEEE 出版日期： 2013-09-15 出處： IEEE Photonics Technology Letters, 2013-09, Vol.25 (18), p.1774-1777 資源來源： IEEE Xplore 識別號： ISSN: 1041-1135 識別號： EISSN: 1941-0174 識別號： DOI: 10.1109/LPT.2013.2275969 識別號： CODEN: IPTLEL
