Nonvolatile organic field effect transistor memory devices using one-dimensional aligned electrospun nanofiber channels of semiconducting polymers

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Title:	Nonvolatile organic field effect transistor memory devices using one-dimensional aligned electrospun nanofiber channels of semiconducting polymers
Authors:	劉振良;Lin, Yu-Wei;Lin, Chih-Jung;Chou, Ying-Hsuan;Liu, Cheng-Liang;Chang, Hsuan-Chun;Chen, Wen-Chang
Contributors:	工學院化學工程與材料工程學系
Keywords:	Alignment;Channels;Data storage;Electrospinning;Field effect transistors;Memory devices;Nanostructure;Polymers
Date:	2013-09-14
Issue Date:	2026-04-21 14:14:34 (UTC+8)
Publisher:	Royal Society of Chemistry
Abstract:	摘要： We report the nonvolatile memory characteristics of organic field effect transistors (OFETs) using one-dimensional aligned electrospun (ES) nanofibers of semiconducting poly(9,9-dioctyl-fluorene-co-bithiophene) (F8T2). The effects of the nanofiber diameter associated with the polymer chain orientation on the charge transport and storage ability were explored. The OFET devices using the F8T2 ES nanofibers exhibited a large average memory window of similar to 30 V, an on-off ratio of 10 super(2)-10 super(3) and a hole mobility of 10 super(-4) to 10 super(-2) cm super(2) V super(-1) s super(-1). The write, erase and read processes of the memory device were performed by voltages across the nanofiber channels for at least 100 cycles and could be stabilized for at least 1000 s. The reversible hysteresis characteristics were attributed to the shallow trapping in the ordered/disordered domains of the F8T2 nanofibers from the in situgrazing incidence wide angle X-ray scattering (GIWAXS) analysis. Our results suggest that the semiconducting ES nanofibers could have potential applications for high performance OFET-based nonvolatile organic memory devices. 出版日期： 2013-01-01 出處： Journal of materials chemistry. C, Materials for optical and electronic devices, 2013-01, Vol.1 (34), p.5336-5343 資源來源： Royal Society of Chemistry 識別號： ISSN: 2050-7526 識別號： EISSN: 2050-7534 識別號： DOI: 10.1039/c3tc31068j
Appears in Collections:	[Department of Chemical and Materials Engineering] journal & Dissertation

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