Influence of low temperature oxidation and nitrogen passivation on the MOS interface of C-face 4H-SiC

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題名:	Influence of low temperature oxidation and nitrogen passivation on the MOS interface of C-face 4H-SiC
作者:	李岱洲;Lee, Kung-Yen;Chang, Yu-Hao;Huang, Yan-Hao;Wu, Shuen-De;Chung, Cheng Yueh;Huang, Chih-Fang;Lee, Tai-Chou
貢獻者:	工學院化學工程與材料工程學系
關鍵詞:	4H-SiC;Aluminum;Anneal;Annealing;Breakdown;Carbon;Condensed matter: electronic structure, electrical, magnetic, and optical properties;Condensed matter: structure, mechanical and thermal properties;Cross-disciplinary physics: materials science;rheology;Density;Drying;Exact sciences and technology;Interface trap density;Metal oxide semiconductors;Oxidation;Oxide breakdown field;Oxides;Passivation;Physics
日期:	2013-10-01
上傳時間:	2026-04-21 14:15:18 (UTC+8)
出版者:	Elsevier;Amsterdam: Elsevier B.V
摘要:	摘要： •Wet oxidation at 950°C followed by NO anneal at 1175°C reduces the interface trap density to 4–6×1011cm−2eV−1.•The positive flat band voltage shift caused by low temperature wet oxidation can be suppressed by the following NO anneal.•The oxide breakdown fields for Al- and N-implanted C-face 4H-SiC samples are about 1.5 and 5MVcm−1, respectively.•The oxide breakdown field of dry oxidation at 950°C is the same as that of wet oxidation at 950°C. Wet and dry thermal oxidations on carbon (C)-face 4H-SiC samples were carried out at temperatures of 850°C, 900°C, 950°C, and 1000°C at different durations, followed by Ar anneals at the same temperature as the oxidations and NO anneals at 1175°C for different durations. The Fowler–Nordheim tunneling exhibits between 2 and 4MVcm−1, respectively, and then the breakdown occurs at around 6–8MVcm−1. The wet oxidation at 950°C provides the lowest interface trap density of 4–6×1011cm−2eV−1 at 0.24eV below the conduction band. Experiments also demonstrate that the oxide breakdown field for an N-implanted sample is lower than that of the non-implanted samples. However, the oxide breakdown field for an Al-implanted sample is even lower than that of the N-implanted sample, only 1.5MVcm−1, mainly due to damage caused by ion implantation. 出版者： Amsterdam: Elsevier B.V 出版日期： 2013-10-01 出處： Applied surface science, 2013-10, Vol.282, p.126-132 版權： 2013 Elsevier B.V. 版權： 2014 INIST-CNRS 識別號： ISSN: 0169-4332 識別號： EISSN: 1873-5584 識別號： DOI: 10.1016/j.apsusc.2013.05.080
顯示於類別:	[化學工程與材料工程學系 ] 期刊論文

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