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    請使用永久網址來引用或連結此文件: https://ir.lib.ncu.edu.tw/handle/987654321/100819


    題名: Mechanism of conductivity degradation of AZO thin film in high humidity ambient
    作者: 劉正毓;Liu, Yen-Shuo;Hsieh, Chih-Yi;Wu, Yen-Ju;Wei, Yu-Shan;Lee, Po-Ming;Hsieh, Hsiu-Ming;Liu, Cheng-Yi
    貢獻者: 工學院化學工程與材料工程學系
    關鍵詞: AZO;Carrier density;Chromium;Condensed matter: electronic structure, electrical, magnetic, and optical properties;Condensed matter: structure, mechanical and thermal properties;Cr-coating layer;Cross-disciplinary physics: materials science;rheology;Degradation;Exact sciences and technology;Humidity;Humidity test;Oxygen vacancy;Physics;Relative humidity;Thin films;Transparent conductive layer;Vacancies;X-ray photoelectron spectroscopy;XPS
    日期: 2013-10-01
    上傳時間: 2026-04-21 14:15:24 (UTC+8)
    出版者: Elsevier;Amsterdam: Elsevier B.V
    摘要: 摘要: •The conductivity of AZO films degrades remarkably in high humidity ambient (90±5% relative humidity) at 60°C.•The high humidity depresses the formation of oxygen vacancies, and decreases the free carriers in the AZO films.•The electrical properties of AZO film can be stabilized by coating a Cr layer on the AZO film surface.•The Cr-coating layer can improve the AZO films electrical stability in the high partial oxygen-pressure annealing ambient. The conductivity stability of aluminum-doped zinc oxide (AZO) films was evaluated in the ambient with different humidity. We found that the conductivity of AZO films is sensitive to the humidity and degrades remarkably in high humidity ambient (90±5% relative humidity) at 60°C. Hall measurement results show that the conductivity degradation is due to the drop in the carrier concentration, while the carrier mobility is found to remain relatively constant in the high humidity ambient. XPS (X-ray photoelectron spectroscopy) analysis reveals that the oxygen-vacancies in the AZO thin films were greatly reduced in the high-humidity ambient. So, we believe that the high-humidity ambient causes the decrease in the oxygen vacancies and eventually resulted in the decrease in the concentration of the free carriers in the AZO thin films. In this study, a mechanism is proposed to explain the humidity-assist reduction in the oxygen vacancies in the humidity-tested AZO films. In addition, we report that the electrical properties of AZO film can be stabilized by coating a Cr layer on the AZO thin film surface.
    出版者: Amsterdam: Elsevier B.V
    出版日期: 2013-10-01
    出處: Applied Surface Science, 2013-10, Vol.282, p.32-37
    版權: 2013 Elsevier B.V.
    版權: 2014 INIST-CNRS
    識別號: ISSN: 0169-4332
    識別號: EISSN: 1873-5584
    識別號: DOI: 10.1016/j.apsusc.2013.04.167
    顯示於類別:[化學工程與材料工程學系 ] 期刊論文

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