Flexible nonvolatile transistor memory devices based on one-dimensional electrospun P3HT:Au hybrid nanofibers

NCUIR > Engineering College > Department of Chemical and Materials Engineering > journal & Dissertation > Item 987654321/100834

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Title:	Flexible nonvolatile transistor memory devices based on one-dimensional electrospun P3HT:Au hybrid nanofibers
Authors:	劉振良;Chang, Hsuan-Chun;Liu, Cheng-Liang;Chen, Wen-Chang
Contributors:	工學院化學工程與材料工程學系
Keywords:	Channels;Data storage;flexible;Gold;gold nanoparticles;nanofiber;Nanofibers;Nanostructure;nonvolatile memory;P3HT;Semiconductor devices;Threshold voltage;transistor;Transistors
Date:	2013-10-18
Issue Date:	2026-04-21 14:15:47 (UTC+8)
Publisher:	Wiley-VCH Verlag;Weinheim: WILEY-VCH Verlag
Abstract:	摘要： AbstractA novel flexible nonvolatile flash transistor memory devices on polyethylene naphthalate (PEN) substrate using 1D electrospun nanofiber of poly(3‐hexylthiophene) (P3HT):gold nanoparticles (Au NPs) hybrid as the channel is presented. The Au NPs are functionalized with self‐assembled monolayer (SAM) of para‐substituted amino (Au‐NH2), methyl (Au‐CH3) or trifluoromethyl (Au‐CF3) tail groups on the benzenethiol moiety. They are employed as localized charge traps across the nanofiber channel and program/erase the device towards low conductance (OFF)/high conductance (ON) states under the applied electrical field. With the low operation voltage of ±5 V, the hybrid nanofiber transistor memories exhibit a 3.5–10.6 V threshold voltage shifting and at least 104 s data retention, with a minimum effect on ≈100 programmed/erased stress endurances. The dipoles of the SAM probably modify the work function of the Au NPs associated with the P3HT nanofiber channel and manifest the degree of negative threshold voltage shifting in an order of Au‐NH2 > Au‐CH3 > Au‐CF3. The devices remain reliable and stable even under the bending conditions (radius: 5–30 mm) or 1000 repetitive bending cycles. The hybrid nanofiber can be used to obtain high‐performance digital nanoscale memories for flexible high density data storage devices. 其他題名： Adv. Funct. Mater 出版者： Weinheim: WILEY-VCH Verlag 出版日期： 2013-10-18 出處： Advanced Functional Materials, 2013-10, Vol.23 (39), p.4960-4968 資源來源： Wiley Online Library Journals AutoHoldings 版權： Copyright © 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim 識別號： ISSN: 1616-301X 識別號： EISSN: 1616-3028 識別號： DOI: 10.1002/adfm.201300283
Appears in Collections:	[Department of Chemical and Materials Engineering] journal & Dissertation

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