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    請使用永久網址來引用或連結此文件: https://ir.lib.ncu.edu.tw/handle/987654321/100837


    題名: Donor-acceptor conjugated polymers of arylene vinylene with pendent phenanthro[9,10-d]imidazole for high-performance flexible resistor-type memory applications
    作者: 劉振良;Wu, Hung-Chin;Liu, Cheng-Liang;Chen, Wen-Chang
    貢獻者: 工學院化學工程與材料工程學系
    日期: 2013-10-21
    上傳時間: 2026-04-21 14:15:50 (UTC+8)
    出版者: Royal Society of Chemistry
    摘要: 摘要: We report the synthesis and resistive memory device characteristics of new donor-acceptor (D-A) conjugated poly(arylene vinylene) polymers, PVC-PI , PVT-PI , and PVTPA-PI , consisting of carbazole ( C ), thiophene ( T ), and triphenylamine ( TPA ) with pendent phenanthro[9,10- d ]imidazole ( PI ). PVC-PI , PVT-PI , and PVTPA-PI synthesized by Stille coupling reaction have the optical band gaps of 2.86, 1.68, and 2.58 eV, respectively. These polymers possess similar HOMO energy levels (−5.08 to −5.18 eV), but different LUMO energy levels (−2.24, −3.40, and −2.60 eV for PVC-PI , PVT-PI , and PVTPA-PI , respectively). The PVC-PI flexible device with the sandwich configuration of PEN/Al/polymer/Al reveals the volatile static random access memory (SRAM) characteristic while the PVTPA-PI device exhibits the nonvolatile write-once-read-many-times (WORM) switching behavior. The above two devices could operate at low voltages (less than 2.5 V) with high ON/OFF current ratios (over 10 4 ) and exhibit excellent durability upon repeated bending tests. However, the PVT-PI device only shows a diode-like electrical behavior. The polymer conformation affects the strength of D-A electrical polarization and charge trapping ability, leading to the variation of the volatility of the memory devices. The present study demonstrates that the prepared vinylene-based donor-acceptor conjugated polymers have excellent memory characteristics with reproducibility and reliability for advanced flexible organic electronics. Donor-acceptor conjugated polymers of arylene (carbazole, thiophene and triphenylamine) vinylene with pendent phenanthro[9,10- d ]imidazole are developed for electrical memory devices with volatile SRAM, diode-like, and nonvolatile WORM characteristics.
    出版日期: 2013-09-17
    資源來源: Royal Society of Chemistry
    識別號: ISSN: 1759-9954
    識別號: EISSN: 1759-9962
    識別號: DOI: 10.1039/c3py00107e
    顯示於類別:[化學工程與材料工程學系 ] 期刊論文

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