Structural investigation of ZnO:Al films deposited on the Si substrates by radio frequency magnetron sputtering

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Title:	Structural investigation of ZnO:Al films deposited on the Si substrates by radio frequency magnetron sputtering
Authors:	鄭紹良;Chen, Y.Y.;Yang, J.R.;Cheng, S.L.;Shiojiri, M.
Contributors:	工學院化學工程與材料工程學系
Keywords:	Bombardment;Condensed matter: structure, mechanical and thermal properties;Cross-disciplinary physics: materials science;rheology;Deposition;Deposition by sputtering;Exact sciences and technology;Forbidden reflection;High-resolution transmission electron microscopy;Magnetron sputtering;Materials science;Methods of deposition of films and coatings;film growth and epitaxy;Nanoscale materials and structures: fabrication and characterization;Other topics in nanoscale materials and structures;Physics;Reflection;Silicon substrates;Structure and morphology;thickness;Substrate bombardment;Surfaces and interfaces;thin films and whiskers (structure and nonelectronic properties);Thin film structure and morphology;Transmission electron microscopy;Zinc;Zinc oxide;ZnO:Al film
Date:	2013-10-31
Issue Date:	2026-04-21 14:16:02 (UTC+8)
Publisher:	Elsevier;Amsterdam: Elsevier B.V
Abstract:	摘要： ZnO:Al films 400nm thick were prepared on (100) Si substrates by magnetron sputtering. Energy dispersive X-ray spectroscopy and transmission electron microscopy (TEM) revealed that in the initial stage of the deposition, an amorphous silicon oxide layer about 4nm thick formed from damage to the Si substrate due to sputtered particle bombardment and the incorporation of Si atoms with oxygen. Subsequently, a crystalline Si (Zn) layer about 30nm thick grew on the silicon oxide layer by co-deposition of Si atoms sputtered away from the substrate with Zn atoms from the target. Finally, a ZnO:Al film with columnar grains was deposited on the Si (Zn) layer. The sputtered particle bombardment greatly influenced the structure of the object films. The (0001) lattice fringes of the ZnO:Al film were observed in high-resolution TEM images, and the forbidden 0001 reflection spots in electron diffraction patterns were attributed to double diffraction. Therefore, the appearance of the forbidden reflection did not imply any ordering of Al atoms and/or O vacancies in the ZnO:Al film. •ZnO:Al films were deposited on (100) Si substrate using magnetron sputtering.•An amorphous silicon oxide layer with a thickness of 4nm was formed on Si substrate.•Crystalline Si (Zn) layer about 30nm thick grew on amorphous silicon oxide layer.•ZnO:Al film comprising columnar grains was deposited on the Si(Zn) layer.•Lattice image of the ZnO:Al film has been interpreted. 出版者： Amsterdam: Elsevier B.V 出版日期： 2013-10-01 出處： Thin Solid Films, 2013-10, Vol.545, p.183-187 版權： 2013 Elsevier B.V. 版權： 2014 INIST-CNRS 識別號： ISSN: 0040-6090 識別號： EISSN: 1879-2731 識別號： DOI: 10.1016/j.tsf.2013.07.079 識別號： CODEN: THSFAP
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