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    Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/100878


    Title: Nonvolatile organic thin film transistor memory devices based on hybrid nanocomposites of semiconducting polymers: Gold nanoparticles
    Authors: 劉振良;Chang, Hsuan-Chun;Liu, Cheng-Liang;Chen, Wen-Chang
    Contributors: 工學院化學工程與材料工程學系
    Keywords: carbon;computer hardware;gold;ligands;nanocomposites;nanogold;polymers;trapping
    Date: 2013-12-26
    Issue Date: 2026-04-21 14:16:56 (UTC+8)
    Publisher: American Chemical Society;United States: American Chemical Society
    Abstract: 摘要: We report the facile fabrication and characteristics of organic thin film transistor (OTFT)-based nonvolatile memory devices using the hybrid nanocomposites of semiconducting poly(9,9-dioctylfluorene-alt-bithiophene) (F8T2) and ligand-capped Au nanoparticles (NPs), thereby serving as a charge storage medium. Electrical bias sweep/excitation effectively modulates the current response of hybrid memory devices through the charge transfer between F8T2 channel and functionalized Au NPs trapping sites. The electrical performance of the hybrid memory devices can be effectively controlled though the loading concentrations (0–9 %) of Au NPs and organic thiolate ligands on Au NP surfaces with different carbon chain lengths (Au-L6, Au-L10, and Au-L18). The memory window induced by voltage sweep is considerably increased by the high content of Au NPs or short carbon chain on the ligand. The hybrid nanocomposite of F8T2:9% Au-L6 provides the OTFT memories with a memory window of ∼41 V operated at ±30 V and memory ratio of ∼1 × 103 maintained for 1 × 104 s. The experimental results suggest that the hybrid materials of the functionalized Au NPs in F8T2 matrix have the potential applications for low voltage-driven high performance nonvolatile memory devices.
    其他題名: ACS Appl. Mater. Interfaces
    出版者: United States: American Chemical Society
    出版日期: 2013-12-26
    出處: ACS Applied Materials & Interfaces, 2013-12, Vol.5 (24), p.13180-13187
    資源來源: American Chemical Society Journals
    版權: Copyright © 2013 American Chemical Society
    識別號: ISSN: 1944-8244
    識別號: ISSN: 1944-8252
    識別號: EISSN: 1944-8252
    識別號: DOI: 10.1021/am404187r
    識別號: PMID: 24224739
    Appears in Collections:[Department of Chemical and Materials Engineering] journal & Dissertation

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