In situ scanning tunneling microscopy of electrodeposition of indium on a copper thin film electrode predeposited on Pt(111) electrode

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題名:	In situ scanning tunneling microscopy of electrodeposition of indium on a copper thin film electrode predeposited on Pt(111) electrode
作者:	姚學麟;Pao, Te;Chen, YuYing;Chen, Sihzih;Yau, Shuehlin
貢獻者:	理學院化學學系
關鍵詞:	Applied sciences;Chemistry;Cross-disciplinary physics: materials science;rheology;Electrochemistry;Electrodeposition, electroplating;Electrodes: preparations and properties;Energy;Exact sciences and technology;General and physical chemistry;Materials science;Methods of deposition of films and coatings;film growth and epitaxy;Natural energy;Photovoltaic conversion;Physics;Solar cells. Photoelectrochemical cells;Solar energy;Theory and models of film growth
日期:	2013-12-19
上傳時間:	2026-04-21 14:17:49 (UTC+8)
出版者:	American Chemical Society;Columbus, OH: American Chemical Society
摘要:	摘要： Indium deposition is involved in preparing semiconducting thin films of copper indium gallium selenide (CIGS)a material of great use in fabricating solar cells. In situ scanning tunneling microscopy (STM) was used to study electrodeposition of indium (In) on a copper (Cu) thin film electrode in 0.1 M K2SO4 + 1 mM H2SO4 + 1 mM In2(SO4)3 (pH 3) electrolyte solutions without and with 1 mM chloride. A Cu thin film predeposited on platinum (111) comprised Cu(111) oriented layers stacked on the Pt(111) substrate. This highly ordered Cu(111)-like substrate rendered detailed characterization of underpotential and overpotential deposition (UPD and OPD) at potentials positive and negative of −0.60 V (vs Ag/AgCl), respectively. Both bisulfate and chloride anions preoccupied the Cu substrate impeded In UPD. Atomic resolution STM imaging revealed that In nucleated preferentially at surface defects, followed by lateral growth to form an organized indium adlayer, identified as a (√37 × √37)R25.3° structure. Indium adatoms aggregated, rather than distributing evenly on the Cu substrate. Indium deposit did not mix with the Cu substrate until the second stage of In UPD. This In/Cu interfacial mixing occurred first at steps and vacancy defects. 其他題名： J. Phys. Chem. C 出版者： Columbus, OH: American Chemical Society 出版日期： 2013-12-19 出處： Journal of physical chemistry. C, 2013-12, Vol.117 (50), p.26659-26666 資源來源： American Chemical Society Journals 版權： Copyright © 2013 American Chemical Society 版權： 2015 INIST-CNRS 識別號： ISSN: 1932-7447 識別號： EISSN: 1932-7455 識別號： DOI: 10.1021/jp4095968
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