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    题名: A study of diphenylfumaronitrile and furan-substituted diketopyrrolopyrrole alternating copolymer and its thin-film transistors
    作者: 陳錦地;Sonar, Prashant;Ha, Tae-Jun;Seong, Yuri;Yeh, Shih-Chieh;Chen, Chin-Ti;Manzhos, Sergei;Dodabalapur, Ananth
    贡献者: 理學院化學學系
    关键词: 4-c]pyrrole;Applied sciences;Copolymers;Devices;diketopyrrolo;diketopyrrolo[3,4‐c]pyrrole;Electronics;Exact sciences and technology;fumaronitrile;furan;Hole mobility;Mathematical analysis;Molecular orbitals;Organic polymers;p-type organic thin-film transistors;Physicochemistry of polymers;polymer semiconductors;Polymers with particular properties;Preparation, kinetics, thermodynamics, mechanism and catalysts;Semiconductor devices;Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices;Synthesis;Thin films;Transistors
    日期: 2014-01-01
    上传时间: 2026-04-21 14:18:50 (UTC+8)
    出版者: Wiley-VCH Verlag;Weinheim: Blackwell Publishing Ltd
    摘要: 摘要: A fused aromatic furan‐substituted diketopyrrolopyrrole and novel diphenylfumaronitrile conjugated building blocks are used for the synthesis of an alternating copolymer (DPFN‐DPPF) via Suzuki polycondensation. In this paper, the first attempt to use the diphenylfumaro­nitrile building block for the synthesis of conjugated polymer is described. The number‐average and weight‐average ­molecular weights calculated for DPFN‐DPPF are 20 661 and 66 346 g mol−1, respectively. The optical bandgap calculated for DPFN‐DPPF is 1.53 eV whereas the highest occupied molecular orbital (HOMO) value calculated by photoelectron spectroscopy in air (PESA) is 5.50 eV. The calculated HOMO value is lower, which is suitable for stable organic electronic devices. DPFN‐DPPF polymer is used as an active layer in bottom‐contact bottom‐gate organic thin‐film transistor devices and the thin film exhibits a hole mobility of 0.20 cm2 V−1 s−1 in air. Diphenylfumaronitrile‐based alternating copolymer (DPFN‐DPPF) combined with a furan‐substituted diketopyrrolopyrrole‐fused aromatic conjugated building block is reported. DPFN‐DPPF exhibits a band‐gap of 1.53 eV with a lower highest occupied molecular orbital (HOMO) value of 5.50 eV. A bottom‐contact bottom‐gate organic thin‐film transistor device fabricated using DPFN‐DPPF thin film exhibits a hole mobility of 0.20 cm2 V−1 s−1 in air.
    其他題名: Macromol. Chem. Phys
    出版者: Weinheim: Blackwell Publishing Ltd
    出版日期: 2014-04
    出處: Macromolecular chemistry and physics, 2014-04, Vol.215 (8), p.725-732
    資源來源: Wiley Online Library - AutoHoldings Journals
    版權: 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim
    版權: 2015 INIST-CNRS
    版權: Copyright 2014 by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
    識別號: ISSN: 1022-1352
    識別號: EISSN: 1521-3935
    識別號: DOI: 10.1002/macp.201300588
    显示于类别:[化學學系] 期刊論文

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