Growing hydrophobicity on a smooth copper oxide thin film at room temperature and reversible wettability transition

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Title:	Growing hydrophobicity on a smooth copper oxide thin film at room temperature and reversible wettability transition
Authors:	曹恆光;Tu, Sheng-Hung;Wu, Hsing-Chen;Wu, Cyuan-Jhang;Cheng, Shao-Liang;Sheng, Yu-Jane;Tsao, Heng-Kwong
Contributors:	工學院化學工程與材料工程學系
Keywords:	Condensed matter: electronic structure, electrical, magnetic, and optical properties;Condensed matter: structure, mechanical and thermal properties;Cross-disciplinary physics: materials science;rheology;Exact sciences and technology;Growing hydrophobicity;Physics;Reversible wetting transition;Smooth CuO film;Superhydrophilicity
Date:	2014-01-01
Issue Date:	2026-04-21 14:18:57 (UTC+8)
Publisher:	Elsevier;Amsterdam: Elsevier B.V
Abstract:	摘要： •The thin CuO film is acquired by a quick dip of copper in H2O2 solutions.•The CuO film appears smooth and exhibits superhydrophilic nature.•Growing hydrophobicity on the CuO film is spontaneous.•The growth rate of the hydrophobicity is significantly elevated in the vacuum.•Reversible wettability transition is observed by H2O2 oxidation/vacuum deoxidation. The thin CuO film is acquired by a quick dip of copper in H2O2 solutions at room temperature. The CuO film appears smooth and exhibits superhydrophilic nature. The composition change cannot be verified by X-ray photoelectron spectroscopy but can be manifested by the water contact angle. In the ambient condition, the thickness of the oxidized layer and the surface hydrophobicity grow gradually, while the chemical composition of the overall oxidized film remains essentially unchanged. In the vacuum, the growth rate of the hydrophobicity is significantly elevated, revealing deoxidation on the upmost surface. Our results indicate that growing hydrophobicity on the CuO film is spontaneous and the reversible wettability transition can be observed by H2O2 oxidation and vacuum deoxidation. 出版者： Amsterdam: Elsevier B.V 出版日期： 2014-10-15 出處： Applied surface science, 2014-10, Vol.316, p.88-92 版權： 2014 Elsevier B.V. 版權： 2015 INIST-CNRS 識別號： ISSN: 0169-4332 識別號： DOI: 10.1016/j.apsusc.2014.07.183
Appears in Collections:	[Department of Chemical and Materials Engineering] journal & Dissertation

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