Influence of Al addition on phase transformation and thermal stability of nickel silicides on Si(0 0 1)

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Title:	Influence of Al addition on phase transformation and thermal stability of nickel silicides on Si(0 0 1)
Authors:	鄭紹良;Huang, Shih-Hsien;Twan, Sheng-Chen;Cheng, Shao-Liang;Lee, Tu;Hu, Jung-Chih;Chen, Lien-Tai;Lee, Sheng-Wei
Contributors:	工學院化學工程與材料工程學系
Keywords:	Alloys;Aluminum;Annealing;Nickel;Phase transformations;Sheet resistance;Silicide;Silicides;Silicon;Thermal stability;Transmission electron microscopy
Date:	2014-01-01
Issue Date:	2026-04-21 14:19:48 (UTC+8)
Publisher:	Elsevier BV;Elsevier B.V
Abstract:	摘要： ► The presence of Al slows down the Ni2Si–NiSi phase transformation but significantly promotes the NiSi2−xAlx formation. ► The behavior of phase transformation strongly depends on the Al concentration of the initial Ni1−xAlx alloys. ► The Ni0.91Al0.09/Si system exhibits remarkably improved thermal stability, even after high temperature annealing for 1000s. ► The relationship between microstructures, electrical property, and thermal stability of Ni(Al) silicides is discussed. The influence of Al addition on the phase transformation and thermal stability of Ni silicides on (001)Si has been systematically investigated. The presence of Al atoms is found to slow down the Ni2Si–NiSi phase transformation but significantly promote the NiSi2−xAlx formation during annealing. The behavior of phase transformation strongly depends on the Al concentration of the initial Ni1−xAlx alloys. Compared to the Ni0.95Pt0.05/Si and Ni0.95Al0.05/Si system, the Ni0.91Al0.09/Si sample exhibits remarkably enhanced thermal stability, even after high temperature annealing for 1000s. The relationship between microstructures, electrical property, and thermal stability of Ni silicides is discussed to elucidate the role of Al during the Ni1−xAlx alloy silicidation. This work demonstrated that thermally stable Ni1−xAlx alloy silicides would be a promising candidate as source/drain (S/D) contacts in advanced complementary metal–oxide-semiconductor (CMOS) devices. 出版者： Elsevier B.V 出版日期： 2014-02-01 出處： Journal of Alloys and Compounds, 2014-02, Vol.586, p.S362-S367 版權： 2013 Elsevier B.V. 識別號： ISSN: 0925-8388 識別號： EISSN: 1873-4669 識別號： DOI: 10.1016/j.jallcom.2013.02.133
Appears in Collections:	[Department of Chemical and Materials Engineering] journal & Dissertation

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