Nanomeshed Pt(Au) transparent contact to p-GaN of light-emitting diode

NCUIR > Engineering College > Department of Chemical and Materials Engineering > journal & Dissertation > Item 987654321/100986

Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/100986

Title:	Nanomeshed Pt(Au) transparent contact to p-GaN of light-emitting diode
Authors:	劉正毓;Li, Xu Feng;Chang, Cheng-Chieh;Liu, Yen-Shuo;Chen, Po-Han;Liu, Cheng-Yi
Contributors:	工學院化學工程與材料工程學系
Keywords:	Characterization and Evaluation of Materials;Chemistry and Materials Science;Conductivity;Electronics;Electronics and Microelectronics;Instrumentation;Light emitting diodes;Materials Science;Optical and Electronic Materials;Solid State Physics;Thin films
Date:	2014-01-01
Issue Date:	2026-04-21 14:20:20 (UTC+8)
Publisher:	Springer New York;Boston: Springer US
Abstract:	摘要： This study examines nanomeshed Pt and Pt(Au) thin films formed by a dewetting process on a p -GaN surface. With prolonged annealing, the Pt(Au) layer shows more stable contact resistance to p -GaN and lower sheet resistance than the Pt layer. L – I curves show that the GaN light-emitting diode (LED) with the Pt(Au) transparent conducting layer (TCL) produces more light output power than the GaN LED with the Pt TCL. The higher light output of the LED with the Pt(Au) TCL is attributed to the lower sheet resistance, which improves current spreading in the active region. 其他題名： Journal of Elec Materi 出版者： Boston: Springer US 出版日期： 2014-01 出處： Journal of electronic materials, 2014-01, Vol.43 (1), p.166-169 資源來源： EBSCOhost OmniFile Full Text Select 版權： TMS 2013 版權： TMS 2014 識別號： ISSN: 0361-5235 識別號： EISSN: 1543-186X 識別號： DOI: 10.1007/s11664-013-2734-5 識別號： CODEN: JECMA5
Appears in Collections:	[Department of Chemical and Materials Engineering] journal & Dissertation

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	13	View/Open

社群 sharing

Loading...