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    Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/101005


    Title: Polarity effect in a Sn3Ag0.5Cu/bismuth telluride thermoelectric system
    Authors: 吳子嘉;Chien, P. Y.;Yeh, C. H.;Hsu, H. H.;Wu, Albert T.
    Contributors: 工學院化學工程與材料工程學系
    Keywords: Characterization and Evaluation of Materials;Chemistry and Materials Science;Electric currents;Electronics;Electronics and Microelectronics;Instrumentation;Materials Science;Optical and Electronic Materials;Plasma sintering;Solid State Physics
    Date: 2014-01-01
    Issue Date: 2026-04-21 14:20:46 (UTC+8)
    Publisher: Springer New York;Boston: Springer US
    Abstract: 摘要: This study investigates electromigration in Bi 2 Te 3 thermoelectric (TE) material systems and the effectiveness of the diffusion barrier under current. The Peltier effect on the interfacial reaction was decoupled from the effect of electromigration. After connecting p - and n -type Bi 2 Te 3 to Sn3Ag0.5Cu (SAC305) solders, different current densities were applied at varying temperatures. The Bi 2 Te 3 samples were fabricated by the spark plasma sintering technique, and an electroless nickel-phosphorous (Ni-P) layer was deposited at the solder/TE interfaces. The experimental results confirm the importance of the Ni diffusion barrier in joint reliability. Intermetallic compound layers (Cu,Ni) 6 Sn 5 and NiTe formed at the solder/Ni-P and Ni-P/substrate interfaces, respectively. The experimental results indicate that the mechanism of NiTe and (Cu,Ni) 6 Sn 5 compound growth was dominated by the Peltier effect at high current density. When the current density was low, the growth of NiTe was affected by electromigration but the changes of thickness for (Cu,Ni) 6 Sn 5 were not obvious.
    其他題名: Journal of Elec Materi
    出版者: Boston: Springer US
    出版日期: 2014-01
    出處: Journal of electronic materials, 2014-01, Vol.43 (1), p.284-289
    資源來源: EBSCOhost OmniFile Full Text Select
    版權: TMS 2013
    版權: TMS 2014
    識別號: ISSN: 0361-5235
    識別號: EISSN: 1543-186X
    識別號: DOI: 10.1007/s11664-013-2877-4
    識別號: CODEN: JECMA5
    Appears in Collections:[Department of Chemical and Materials Engineering] journal & Dissertation

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