Tunable dielectric constant of polyimide-barium titanate nanocomposite materials as the gate dielectrics for organic thin film transistor applications

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Title:	Tunable dielectric constant of polyimide-barium titanate nanocomposite materials as the gate dielectrics for organic thin film transistor applications
Authors:	劉振良;Yu, Yang-Yen;Liu, Cheng-Liang;Chen, Yung-Chih;Chiu, Yu-Cheng;Chen, Wen-Chang
Contributors:	工學院化學工程與材料工程學系
Date:	2014-01-01
Issue Date:	2026-04-21 14:22:16 (UTC+8)
Publisher:	Royal Society of Chemistry
Abstract:	摘要： We report on a systematic study of hydroxyl-containing polyimide (PI)-BaTiO 3 (BT) nanoparticle (NP) nanocomposite dielectric materials, to determine the effects of BT NPs loadings ( X ) for X = 0, 2, 5, 8, 10, and 12 wt%, on p-type pentacene organic thin film transistors (OTFTs). A condensation reaction to produce well-dispersed BT NPs within the PI matrix was followed by spin-coating to form a dielectric thin film directly on a silicon substrate. The thermal, optical, surface, dielectric, and electrical properties of the PI-BP X hybrid dielectric composite correlated to BT content for each sample. The hybrid dielectric composites exhibit tunable insulating properties, including high dielectric constant values in the range 5.2-11.3, high capacitances from 3.1 to 27.9 nF cm −2 for a film thickness of approximately 350 nm, and low leakage current densities in the range of 1.85 × 10 −7 to 2.76 × 10 −6 A cm −2 at 2 MV cm −1 . Bottom-gate top-contact OTFTs fabricated using various PI-BT X hybrid dielectrics, exhibit low threshold voltages of −4.09-2.62 V, moderately high field-effect mobility rates of 3.36 × 10 −2 ∼2.32 × 10 −1 cm 2 V −1 s −1 , and high ON/OFF ratios of approximately 10 5 . This study opens a route towards transparent and highly stable hybrid dielectric materials with tunable dielectric properties, by careful selection of NPs and polymer matrix combinations. Polyimide (PI)-BaTiO 3 (BT) NPs hybrid nanocomposite dielectrics with tunable BT loadings ( X ) were fabricated for investigating their properties on the pentacene organic thin film transistors (OTFTs). 出版日期： 2014-11-18 資源來源： Royal Society of Chemistry 識別號： EISSN: 2046-2069 識別號： DOI: 10.1039/c4ra08694e
Appears in Collections:	[Department of Chemical and Materials Engineering] journal & Dissertation

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