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    Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/101063


    Title: Electromigration-induced back stress in critical solder length for three-dimensional integrated circuits
    Authors: 吳子嘉;Huang, Y. T.;Hsu, H. H.;Wu, Albert T.
    Contributors: 工學院化學工程與材料工程學系
    Keywords: Chip formation;CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;COPPER;CURRENT DENSITY;ELECTRODES;Electromigration;Electronic devices;ELECTROPHORESIS;ELECTROPLATING;Flip chip soldering;Grooves;INTEGRATED CIRCUITS;INTERMETALLIC COMPOUNDS;MICROSTRUCTURE;Miniaturization;MORPHOLOGICAL CHANGES;Sandwich structures;SILICON;SILVER;Solders;STRESSES;TEMPERATURE DEPENDENCE;Test vehicles;TIN
    Date: 2014-02-10
    Issue Date: 2026-04-21 14:22:26 (UTC+8)
    Publisher: Melville: AIP Publishing
    Abstract: 摘要: Because of the miniaturization of electronic devices, the reliability of electromigration has become a major concern when shrinking the solder dimensions in flip-chip joints. Fast reaction between solders and electrodes causes intermetallic compounds (IMCs) to form, which grow rapidly and occupy entire joints when solder volumes decrease. In this study, U-grooves were fabricated on Si chips as test vehicles. An electrode-solder-electrode sandwich structure was fabricated by using lithography and electroplating. Gaps exhibiting well-defined dimensions were filled with Sn3.5Ag solders. The gaps between the copper electrodes in the test sample were limited to less than 15 μm to simulate microbumps. The samples were stressed at various current densities at 100 °C, 125 °C, and 150 °C. The morphological changes of the IMCs were observed, and the dimensions of the IMCs were measured to determine the kinetic growth of IMCs. Therefore, this study focused on the influence of back stress caused by microstructural evolution in microbumps.
    出版者: Melville: AIP Publishing
    出版日期: 2014-01-21
    出處: Journal of Applied Physics, 2014-01, Vol.115 (3)
    資源來源: AIP Journals (American Institute of Physics)
    版權: 2014 AIP Publishing LLC.
    識別號: ISSN: 0021-8979
    識別號: EISSN: 1089-7550
    識別號: DOI: 10.1063/1.4861740
    Appears in Collections:[Department of Chemical and Materials Engineering] journal & Dissertation

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