摘要： A back-fill Sn flow is reported against the current-stressing at Sn/Cu micro-joint interface. Upon current-stressing, as the cathode Cu6Sn5 compound is dissolving into adjacent Sn solder matrix, Cu in the dissolving Cu6Sn5 compound region would be highly-depleted, which would likely transform to highly-vacant Sn grains. Thus, a large Sn concentration gradient would be established between the highly-vacant Sn grains (dissolving Cu6Sn5 compound) and the Sn solder matrix, which causes Sn atoms diffusing into the newly-formed Sn grains. The driving force of the back-fill Sn flow was evaluated and, indeed, it can overcome the electromigration force. 其他題名： ECS Solid State Lett 出版者： The Electrochemical Society 出版日期： 2014-01-01 出處： ECS solid state letters, 2014-01, Vol.3 (2), p.P17-P19 版權： 2013 The Electrochemical Society 識別號： ISSN: 2162-8742 識別號： EISSN: 2162-8750 識別號： DOI: 10.1149/2.004402ssl
