Condensation of two-dimensional oxide-interfacial charges into one-dimensional electron chains by the misfit-dislocation strain field

NCUIR > Engineering College > Department of Chemical and Materials Engineering > journal & Dissertation > Item 987654321/101116

Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/101116

Title:	Condensation of two-dimensional oxide-interfacial charges into one-dimensional electron chains by the misfit-dislocation strain field
Authors:	鄭紹良;Chang, C.-P.;Chu, M.-W.;Jeng, H. T.;Cheng, S.-L.;Lin, J. G.;Yang, J.-R.;Chen, C. H.
Contributors:	工學院化學工程與材料工程學系
Keywords:	639/301/119/995;Humanities and Social Sciences;multidisciplinary;Science;Science (multidisciplinary)
Date:	2014-03-24
Issue Date:	2026-04-21 14:24:33 (UTC+8)
Publisher:	Nature Publishing Group;London: Nature Publishing Group UK
Abstract:	摘要： The success of semiconductor technology is largely ascribed to controlled impacts of strains and defects on the two-dimensional interfacial charges. Interfacial charges also appear in oxide heterojunctions such as LaAlO 3 /SrTiO 3 and (Nd 0.35 Sr 0.65 )MnO 3 /SrTiO 3 . How the localized strain field of one-dimensional misfit dislocations, defects resulting from the intrinsic misfit strains, would affect the extended oxide-interfacial charges is intriguing and remains unresolved. Here we show the atomic-scale observation of one-dimensional electron chains formed in (Nd 0.35 Sr 0.65 )MnO 3 /SrTiO 3 by the condensation of characteristic two-dimensional interfacial charges into the strain field of periodically arrayed misfit dislocations, using chemical mapping and quantification by scanning transmission electron microscopy. The strain-relaxed inter-dislocation regions are readily charge depleted, otherwise decorated by the pristine charges, and the corresponding total-energy calculations unravel the undocumented charge-reservoir role played by the dislocation-strain field. This two-dimensional-to-one-dimensional electronic condensation represents a novel electronic-inhomogeneity mechanism at oxide interfaces and could stimulate further studies of one-dimensional electron density in oxide heterostructures. Strain is one of the parameters used to control electron densities in semiconductor devices. Here, the authors show that strain at the interface of two oxide thin films can lead to the condensation of the two-dimensional interfacial electron density into one-dimensional chains. 其他題名： Nat Commun 出版者： London: Nature Publishing Group UK 出版日期： 2014-03-24 出處： Nature communications, 2014-03, Vol.5 (1), p.3522, Article 3522 資源來源： Publicly Available Content Database 版權： Springer Nature Limited 2014 版權： Copyright Nature Publishing Group Mar 2014 識別號： ISSN: 2041-1723 識別號： EISSN: 2041-1723 識別號： DOI: 10.1038/ncomms4522 識別號： PMID: 24663109
Appears in Collections:	[Department of Chemical and Materials Engineering] journal & Dissertation

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	18	View/Open

社群 sharing

Loading...