Periodic arrays of nanopores made on single-crystalline silicon substrates with a self-assembled lithographic process

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題名:	Periodic arrays of nanopores made on single-crystalline silicon substrates with a self-assembled lithographic process
作者:	鄭紹良;Cheng, S.L.;Lin, Y.H.;Lee, S.W.;Chen, H.
貢獻者:	工學院化學工程與材料工程學系
關鍵詞:	Anisotropic etching;Applied sciences;Arrays;Condensed matter: structure, mechanical and thermal properties;Cross-disciplinary physics: materials science;rheology;Electronics;Etching;Exact sciences and technology;Light trapping;Materials science;Methods of deposition of films and coatings;film growth and epitaxy;Nanopore;Nanosphere lithography;Nanostructure;Optoelectronic devices;Physics;Physics of gases, plasmas and electric discharges;Physics of plasmas and electric discharges;Plasma;Plasma applications;Porosity;Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices;Silicon;Silicon substrates;Single crystals;Structure and morphology;thickness;Surfaces and interfaces;thin films and whiskers (structure and nonelectronic properties);Theory and models of film growth;Thin film structure and morphology
日期:	2014-04-30
上傳時間:	2026-04-21 14:25:34 (UTC+8)
出版者:	Elsevier;Amsterdam: Elsevier B.V
摘要:	摘要： We report here the fabrication of periodic arrays of size- shape-, and spacing-controllable Si nanopores on single-crystalline (110)Si and (111)Si substrates by using our proposed approach, which is based on the self-assembled polystyrene nanosphere lithography in conjunction with the use of oxygen plasma treatments and KOH anisotropic etching processes. Compared with other works, the facile approach proposed here offers a much simpler and low-cost scheme which does not require the use of additional metal-film hard masks deposition and stripping processes. By adjusting the KOH etching duration, the Si nanopore size can be effectively tuned and controlled. The Si nanopores formed on (110)Si and (111)Si were found to be heavily faceted, and their faceted morphologies were mainly determined by the crystal orientations of the Si substrates used. Furthermore, the results of the ultraviolet-visible spectroscopic measurements revealed that the (110)Si substrate with nanopore arrays exhibited significant antireflection properties, and its optical reflectance was found to decrease with increasing the etched nanopore size. The obtained results present the exciting prospects that the combined approach presented here could have significant potential for use in Si-based optoelectronic devices. •A facile route is developed to fabricate nanopore arrays on (110)Si and (111)Si.•The size and shape of silicon (Si) nanopores can be effectively controlled.•The morphologies of Si nanopores are determined by the Si substrate orientations.•The nanopore structure reduces significantly the optical reflection of Si surface.•The nanopore-textured Si surface exhibited a reduced angular reflectivity. 出版者： Amsterdam: Elsevier B.V 出版日期： 2014-04-30 出處： Thin solid films, 2014-04, Vol.557, p.376-381 版權： 2013 Elsevier B.V. 版權： 2015 INIST-CNRS 識別號： ISSN: 0040-6090 識別號： EISSN: 1879-2731 識別號： DOI: 10.1016/j.tsf.2013.10.080 識別號： CODEN: THSFAP
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