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| 題名: | Solution-processed small-molecule bulk heterojunction ambipolar transistors |
| 作者: | 陳銘洲;Cheng, Shiau-Shin;Huang, Peng-Yi;Ramesh, Mohan;Chang, Hsiu-Chieh;Chen, Li-Ming;Yeh, Chia-Ming;Fung, Chun-Lin;Wu, Meng-Chyi;Liu, Chung-Chi;Kim, Choongik;Lin, Hong-Cheu;Chen, Ming-Chou;Chu, Chih-Wei |
| 貢獻者: | 理學院化學學系 |
| 關鍵詞: | ambipolar;Buckminsterfullerene;bulk heterojunctions;Carrier mobility;Fullerenes;Heterojunctions;inverters;Organic semiconductors;Semiconductor devices;Semiconductors;solution process;thin-film transistors;Transistors |
| 日期: | 2014-04-09 |
| 上傳時間: | 2026-04-21 14:25:37 (UTC+8) |
| 出版者: | Wiley-VCH Verlag;Blackwell Publishing Ltd |
| 摘要: | 摘要： Solution‐processed small‐molecule bulk heterojunction (BHJ) ambipolar organic thin‐film transistors are fabricated based on a combination of [2‐phenylbenzo[d,d']thieno[3,2‐b;4,5‐b']dithiophene (P‐BTDT) : 2‐(4‐n‐octylphenyl)benzo[d,<jats:styled-content>d</jats:styled-content>']thieno[3,2‐b;4,5‐b']dithiophene (OP‐BTDT)] and C60. Treating high electrical performance vacuum‐deposited P‐BTDT organic semiconductors with a newly developed solution‐processed organic semiconductor material, OP‐BTDT, in an optimized ratio yields a solution‐processed p‐channel organic semiconductor blend with carrier mobility as high as 0.65 cm2 V−1 s−1. An optimized blending of P‐BTDT:OP‐BTDT with the n‐channel semiconductor, C60, results in a BHJ ambipolar transistor with balanced carrier mobilities for holes and electrons of 0.03 and 0.02 cm2 V−1 s−1, respectively. Furthermore, a complementary‐like inverter composed of two ambipolar thin‐film transistors is demonstrated, which achieves a gain of 115.
其他題名： Adv. Funct. Mater
出版者： Blackwell Publishing Ltd
出版日期： 2014-04-01
出處： Advanced Functional Materials, 2014-04, Vol.24 (14), p.2057-2063
資源來源： Wiley Online Library - AutoHoldings Journals
版權： 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim
識別號： ISSN: 1616-301X
識別號： EISSN: 1616-3028
識別號： DOI: 10.1002/adfm.201303378 |
| 顯示於類別: | [化學學系] 期刊論文
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