Internal quantum efficiency enhancement by relieving compressive stress of GaN-Based LED

NCUIR > Engineering College > Department of Chemical and Materials Engineering > journal & Dissertation > Item 987654321/101258

Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/101258

Title:	Internal quantum efficiency enhancement by relieving compressive stress of GaN-Based LED
Authors:	劉正毓;Lin, Yi Chin;Liu, Wei Chih;Chang, Chia Lun;Chung, Chao Chi;Chen, Yan Hao;Chung, Te Yuan;Liu, Cheng Yi
Contributors:	工學院化學工程與材料工程學系
Keywords:	Compressive properties;Compressive stress;Energy states;Eutectics;Gallium nitride;Light emitting diodes;Piezoelectricity;Quantum efficiency;Quantum wells;Reduction;Silicon;Stresses;Substrates
Date:	2014-09-15
Issue Date:	2026-04-21 14:28:33 (UTC+8)
Publisher:	Institute of Electrical and Electronics Engineers Inc.;New York: IEEE
Abstract:	摘要： By die-attaching GaN-based light-emitting diodes (LEDs) on Si substrates with eutectic AuSn solder, the external quantum efficiency of the LEDs was enhanced by 3.5% at a current input of 120 A/cm 2 . The enhancement of the external quantum efficiency of the die-attached LED chips is attributed to a reduction in compressive stress and piezoelectric fields in quantum wells after eutectic AuSn die-attachment. Raman and photoluminescence analyses were used to estimate the reduction in compressive stress and piezoelectric field in quantum wells, which is 277.8 MPa and 0.056 MV/cm, respectively, after AuSn die-attachment. 其他題名： LPT 出版者： New York: IEEE 出版日期： 2014-09-15 出處： IEEE photonics technology letters, 2014-09, Vol.26 (18), p.1793-1796 資源來源： IEEE Electronic Library (IEL) 版權： Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2014 識別號： ISSN: 1041-1135 識別號： EISSN: 1941-0174 識別號： DOI: 10.1109/LPT.2014.2329857 識別號： CODEN: IPTLEL
Appears in Collections:	[Department of Chemical and Materials Engineering] journal & Dissertation

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