Asymmetric fused thiophenes for field-effect transistors: Crystal structure-film microstructure-transistor performance correlations

Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/101319

Title:	Asymmetric fused thiophenes for field-effect transistors: Crystal structure-film microstructure-transistor performance correlations
Authors:	陳銘洲;Chen, Ming-Chou;Vegiraju, Sureshraju;Huang, Chi-Ming;Huang, Peng-Yi;Prabakaran, Kumaresan;Yau, Shueh Lin;Chen, Wei-Chih;Peng, Wei-Tao;Chao, Ito;Kim, Choongik;Tao, Yu-Tai
Contributors:	理學院化學學系
Keywords:	Asymmetry;Derivatives;Devices;Phenyls;Semiconductor devices;Stacking;Transistors
Date:	2014-11-14
Issue Date:	2026-04-21 14:30:19 (UTC+8)
Publisher:	Royal Society of Chemistry
Abstract:	摘要： New asymmetric phenyl and perfluorophenyl end-functionalized dithienothiophene (DTT)- and bisdithienothiophene (BDTT)-based fused-thiophene derivatives (FPP-DTT; 1 and FPP-BDTT; 3) were synthesized and characterized for organic thin-film transistor (OTFT) applications. For comparison, symmetric phenyl end-capped dithienothiophene and bisdithienothiophene derivatives DP-DTT (2) and DP-BDTT (4) were also explored in parallel. The crystal structures of all four molecules were determined viasingle-crystal X-ray diffraction. Asymmetric compounds 1 and 3 exhibit face-to-face pi - pi stacking, while symmetric 2 and 4 show herringbone stacking. Single-crystal and thin-film transistors based on these four materials were fabricated. For single-crystal transistors, asymmetric FPP-DTT and FPP-BDTT gave high p-channel mobilities of 0.74 and 0.73 cm super(2) V super(-1) s super(-1), respectively, as well as current on/off ratios of similar to 10 super(5). Symmetric DP-DTT and DP-BDTT gave relatively lower p-channel mobilities of 0.36 and 0.41 cm super(2) V super(-1) s super(-1), respectively. For thin-film transistors, FPP-DTT and DP-DTT films deposited at 25 degree C exhibited decent p-channel characteristics with a carrier mobility as high as 0.15 and 0.20 cm super(2) V super(-1) s super(-1), respectively for top-contact/bottom-gate OTFT devices. The device characteristics on various gate dielectrics have been correlated with the film morphologies and microstructures of the corresponding compounds. 出版日期： 2014-11-14 出處： Journal of materials chemistry. C, Materials for optical and electronic devices, 2014-11, Vol.2 (42), p.8892-8902 資源來源： Royal Society of Chemistry 識別號： ISSN: 2050-7526 識別號： EISSN: 2050-7534 識別號： DOI: 10.1039/C4TC01454E
Appears in Collections:	[Department of Chemistry] journal & Dissertation

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