Etching three-dimensional pattern on sapphire substrate by dynamic self-masking alunogen compound

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Title:	Etching three-dimensional pattern on sapphire substrate by dynamic self-masking alunogen compound
Authors:	劉正毓;Huang, S. W.;Wu, Y. J.;Lin, H. Y.;Li, S. F.;Chen, Y. J.;Liu, C. Y.
Contributors:	工學院化學工程與材料工程學系
Date:	2015-01-01
Issue Date:	2026-04-21 14:31:50 (UTC+8)
Publisher:	The Electrochemical Society
Abstract:	摘要： Maskless H2SO4 wet-etching on sapphire substrates creates three-dimensional pyramidal pattern on sapphire surface. Alunogen self-forming mask grows in H2SO4 etching generating a dynamic self-masking action, which fabricates 3-dimensional pyramidal pattern on the etched sapphire wafers. The slope and size of the pyramids are controlled by rate ratio (k) between alunogen growth rate and c-plane etching rate. Constant k results in flat facet side-planes of sapphire pyramids and varying k in etching produce curved side-planes of the sapphire pyramid. 其他題名： ECS Solid State Lett 出版者： The Electrochemical Society 出版日期： 2015-04-15 出處： ECS solid state letters, 2015-04, Vol.4 (6), p.R35-R38 資源來源： Institute of Physics Open Access Journals 版權： The Author(s) 2015. Published by ECS. 識別號： ISSN: 2162-8742 識別號： ISSN: 2162-8750 識別號： EISSN: 2162-8750 識別號： DOI: 10.1149/2.0051506ssl
Appears in Collections:	[Department of Chemical and Materials Engineering] journal & Dissertation

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