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| 題名: | Diperfluorophenyl Fused Thiophene Semiconductors for n-Type Organic Thin Film Transistors (OTFTs) |
| 作者: | 陳銘洲;Youn, Jangdae;Vegiraju, Sureshraju;Emery, Jonathan D.;Leever, Benjamin J.;Kewalramani, Sumit;Lou, Silvia J.;Zhang, Shiming;Prabakaran, Kumaresan;Ezhumalai, Yamuna;Kim, Choongik;Huang, Peng‐Yi;Stern, Charlotte;Chang, Wen‐Chung;Bedzyk, Michael J.;Chen, Lin X.;Chen, Ming‐Chou;Facchetti, Antonio;Marks, Tobin J. |
| 貢獻者: | 理學院化學學系 |
| 關鍵詞: | dithienothiophenes (DTTs);fused thiophenes;organic semiconductors;organic thin film transistors (OTFTs);perfluorophenyl;tetrathienoacens (TTAs);thienothiophenes (TTs) |
| 日期: | 2015-01-01 |
| 上傳時間: | 2026-04-21 14:32:21 (UTC+8) |
| 出版者: | Wiley-VCH Verlag |
| 摘要: | 摘要： Three new fused thiophene semiconductors, end‐capped with diperfluorophenylthien‐2‐yl (DFPT) groups (DFPT‐thieno[2′,3′:4,5]thieno[3,2‐b]thieno[2,3‐d]thiophene (TTA), DFPT‐dithieno[2,3‐b:3′,2′‐d]thiophenes (DTT), and DFPT‐thieno[3,2‐b]thiophene (TT)), are synthesized and characterized in organic thin film transistors. Good environmental stability of the newly developed materials is demonstrated via thermal analysis as well as degradation tests under white light. The molecular structures of all three perfluorophenylthien‐2‐yl end‐functionalized derivatives are determined by single crystal X‐ray diffraction. DFPT‐TTA and DFPT‐TT exhibit good n‐type TFT performance, with mobilities up to 0.43 and 0.33 cm2 V−1 s−1, respectively. These are among the best performing n‐type materials of all fused thiophenes reported to date. The best thin film transistor device performance is achieved via an n‐octadecyltrichlorosilane dielectric surface treatment on the thermally grown Si/SiO2 substrates prior to vapor‐phase semiconductor deposition. Within the DFPT series, carrier mobility magnitudes depend strongly on the semiconductor growth conditions and the gate dielectric surface treatment. Three new fused thiophene semiconductors are synthesized and characterized in organic thin film transistors (OTFTs). Good environmental stability of the newly developed materials is demonstrated via thermal analysis as well as degradation tests under white light. Thin films of new compounds are employed as active layers for OTFTs and exhibit good n‐type performance with mobilities as high as 0.43 cm2 V−1 s−1.
出版日期： 2015-08
出處： Advanced electronic materials, 2015-08, Vol.1 (8), p.n/a
版權： 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim
識別號： ISSN: 2199-160X
識別號： EISSN: 2199-160X
識別號： DOI: 10.1002/aelm.201500098 |
| 顯示於類別: | [化學學系] 期刊論文
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