摘要： The growth mechanisms of ZnO nanorods (NRs) on sputtered Al-doped ZnO (AZO) and V-doped AZO (V:AZO) thin films are studied in this work. Firstly, the microstructure of the AZO and V:AZO thin films was investigated by XRD. We found that V-dopants retard the crystallization (grain growth) and enlarge the d-spacing of the (0002) plane of the V:AZO thin films. ZnO NRs were prepared on the AZO and V:AZO thin film substrates by the hydrothermal method. Vertically aligned ZnO NRs were grown on the pure AZO thin film substrate. With incorporating V-dopants, the growth direction of ZnO NRs grown on the V:AZO thin films is highly influenced by the concentration of the V-doping. The V-doping causes the random growth direction of ZnO NRs. XRD and SEM analysis indicate that the growth behavior of ZnO NRs depends on the microstructure of the surface grains of the AZO and V:AZO thin film substrates. A growth mechanism of ZnO NRs on the AZO and V:AZO thin film substrates is proposed in this work. 其他題名： J Sol-Gel Sci Technol 出版者： Boston: Springer US 出版日期： 2015-03-01 出處： Journal of sol-gel science and technology, 2015-03, Vol.73 (3), p.647-654 版權： Springer Science+Business Media New York 2015 版權： Journal of Sol-Gel Science and Technology is a copyright of Springer, (2015). All Rights Reserved. 識別號： ISSN: 0928-0707 識別號： EISSN: 1573-4846 識別號： DOI: 10.1007/s10971-015-3614-7
