Polymeric charge storage electrets for non-volatile organic field effect transistor memory devices

NCUIR > Engineering College > Department of Chemical and Materials Engineering > journal & Dissertation > Item 987654321/101443

Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/101443

Title:	Polymeric charge storage electrets for non-volatile organic field effect transistor memory devices
Authors:	劉振良;Chou, Ying-Hsuan;Chang, Hsuan-Chun;Liu, Cheng-Liang;Chen, Wen-Chang
Contributors:	工學院化學工程與材料工程學系
Date:	2015-01-21
Issue Date:	2026-04-21 14:33:59 (UTC+8)
Publisher:	Royal Society of Chemistry;Royal Society of Chemistry (RSC)
Abstract:	摘要： In this review, we present the effects of the chemical structure and composition of polymer or composite electrets on tuning the memory characteristics of the non-volatile organic field effect transistor (OFET) memory devices, including surface polarity, π-conjugation length, architecture, donor-acceptor strength, and interface energy barrier. The recent progress in developing polymer-based charge storage electrets is highlighted in order to provide insights into understanding the operation mechanism and the molecular design-memory properties relationship, as well as improving the overall performance of OFET memory devices. A review on polymeric charge storage electrets for constructing non-volatile organic field effect memory devices is presented. 出版者： Royal Society of Chemistry (RSC) 出版日期： 2015-01-21 出處： Polymer Chemistry, 2015-01, Vol.6 (3), p.341-352 資源來源： Royal Society of Chemistry 識別號： ISSN: 1759-9954 識別號： EISSN: 1759-9962 識別號： DOI: 10.1039/c4py01213e
Appears in Collections:	[Department of Chemical and Materials Engineering] journal & Dissertation

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