Study of p-type AlN-doped SnO 2 thin films and its transparent devices

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Title:	Study of p-type AlN-doped SnO 2 thin films and its transparent devices
Authors:	劉正毓;Wu, Y.J.;Liu, Y.S.;Hsieh, C.Y.;Lee, P.M.;Wei, Y.S.;Liao, C.H.;Liu, C.Y.
Contributors:	工學院化學工程與材料工程學系
Keywords:	Aluminum;Annealing;Conduction heating;Outgassing;p-Type;SnO2;Thin film;Thin films;Tin dioxide;Tin oxides;Volt-ampere characteristics;X-ray photoelectron spectroscopy;XPS
Date:	2015-02-15
Issue Date:	2026-04-21 14:34:26 (UTC+8)
Publisher:	Elsevier;Elsevier B.V
Abstract:	摘要： •A p-type AlN-doped SnO2/n-type fluorine-doped SnO2 junction was fabricated.•The I–V curve of this SnO2 junction exhibited clear p–n junction characteristics and low turn-on voltage.•The p-type AlN-doped SnO2/n-type fluorine-doped SnO2 junction has excellent transmittance in the visible region.•The formation of the SnNAl bond improved the stability of the N ions in the AlN-doped SnO2 thin films. The electrical properties of transparent Al-doped tin oxide (SnO2), N-doped SnO2, and AlN-doped SnO2 thin films were studied. The Al-doped tin oxide (SnO2) thin films all show n-type conduction regardless the annealing condition. The n-type conduction of the as-deposited N-doped SnO2, and AlN-doped SnO2 thin films could be converted to p-type conduction by annealing the films at an elevated temperature of 450°C. XPS analysis verified that the substitution of N ions in the O ion sites in the annealed N-doped SnO2 and AlN-doped SnO2 thin films were responsible for the n–p conduction transition. The conduction of the annealed N-doped SnO2 and AlN-doped SnO2 thin films could be converted back to n-type conduction by thermally annealing the films at higher temperature, over 450°C. The p–n conduction transition is related with the outgassing of N ions in the p-type N-doped SnO2 and AlN-doped SnO2 thin films. Remarkably, we found that the Al content can retard the outgassing of N ions in the p-type N-doped SnO2 and AlN-doped SnO2 thin films and prolong the p–n conduction transition temperature above 600°C. XPS analysis revealed that the formation of the SnNAl bond improved the stability of the N ions in the AlN-doped SnO2 thin films. I–V curve of the p-type AlN-doped SnO2/n-type fluorine-doped SnO2 junction exhibited clear p–n junction characteristics, a low leakage current under the revised bias (1.13×10−5A at −5V), and a low turn-on voltage (3.24V). p-Type AlN-doped SnO2/n-type fluorine-doped SnO2 junction exhibited excellent transmittance (over 90%) in the visible region (470–750nm). 出版者： Elsevier B.V 出版日期： 2015-02-15 出處： Applied surface science, 2015-02, Vol.328, p.262-268 版權： 2014 Elsevier B.V. 識別號： ISSN: 0169-4332 識別號： DOI: 10.1016/j.apsusc.2014.12.028
Appears in Collections:	[Department of Chemical and Materials Engineering] journal & Dissertation

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