A 1D Electrospun Nanofiber Channel for Organic Field-Effect Transistors Using a Donor/Acceptor Planar Heterojunction Architecture

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Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/101473

Title:	A 1D Electrospun Nanofiber Channel for Organic Field-Effect Transistors Using a Donor/Acceptor Planar Heterojunction Architecture
Authors:	劉振良;Chang, Hsuan‐Chun;Shih, Chien‐Chung;Liu, Cheng‐Liang;Chen, Wen‐Chang
Contributors:	工學院化學工程與材料工程學系
Keywords:	Capping;Channels;Deposition;donor/acceptor;electrospinning;heterojunction;Heterojunctions;Memory devices;nanofiber;Nanostructure;Semiconductor devices;transistor;Tuning
Date:	2015-04-01
Issue Date:	2026-04-21 14:34:56 (UTC+8)
Publisher:	John Wiley and Sons Ltd;Weinheim: John Wiley & Sons, Inc
Abstract:	摘要： An organic donor/acceptor planar heterojunction transistor based on electronspun poly(3‐hexlthiophene)/thermally deposited copper hexadecafluorophthalocyanine (F16CuPc) active layer has been developed for a unipolar p‐type nonvolatile memory and ambipolar device through simple tuning of the top F16CuPc capping layer thickness. 出版者： Weinheim: John Wiley & Sons, Inc 出版日期： 2015-04-01 出處： Advanced materials interfaces, 2015-04, Vol.2 (6), p.np-n/a 版權： 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim 版權： Copyright © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim 識別號： ISSN: 2196-7350 識別號： EISSN: 2196-7350 識別號： DOI: 10.1002/admi.201500054
Appears in Collections:	[Department of Chemical and Materials Engineering] journal & Dissertation

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