Poly(3-hexylthiophene)-graphene composite-based aligned nanofibers for high-performance field effect transistors

NCUIR > Engineering College > Department of Chemical and Materials Engineering > journal & Dissertation > Item 987654321/101497

Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/101497

Title:	Poly(3-hexylthiophene)-graphene composite-based aligned nanofibers for high-performance field effect transistors
Authors:	劉振良;Lin, Chih-Jung;Liu, Cheng-Liang;Chen, Wen-Chang
Contributors:	工學院化學工程與材料工程學系
Date:	2015-05-07
Issue Date:	2026-04-21 14:36:15 (UTC+8)
Publisher:	Royal Society of Chemistry
Abstract:	摘要： We report the morphology and field effect transistor (FET) characteristics of aligned electrospun nanofibers prepared from poly(3-hexylthiophene) (P3HT)-graphene composites. The graphene flakes were more uniformly distributed in the nanofibers compared with spin-coated films, leading to different FET characteristics. The geometrical confinement from electrospun nanofibers resulted in enhanced π-π molecular packing with highly ordered orientation and reduced the grain boundaries under strong stretching forces, thereby increasing carrier mobility. The graphene behaved as an electrically conducting bridge between the P3HT domains in the composites, and thus the FET mobility generally increased as the graphene composition increased. Remarkably, the ES-PG4 FET had the highest hole mobility of 1.82 cm 2 V −1 s −1 and a moderately high I ON / I OFF of 5.88 × 10 4 , which also exhibited good environmental stability for its transfer characteristics. The experimental results indicated that semiconducting composites based one-dimensional nanofiber devices offer advantages over conventional spin-coated thin films and provide a simple strategy for producing high-performance FET devices. A high-performance FET with a maximum mobility of 1.82 cm 2 V −1 s −1 was fabricated from aligned electrospun P3HT-graphene composite nanofibers. 出版日期： 2015-04-23 資源來源： Royal Society of Chemistry 識別號： ISSN: 2050-7526 識別號： EISSN: 2050-7534 識別號： DOI: 10.1039/c5tc00399g
Appears in Collections:	[Department of Chemical and Materials Engineering] journal & Dissertation

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	17	View/Open

社群 sharing

Loading...