Observation of Ni 3+ acceptor in P-type Ni(P):SnO 2

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題名:	Observation of Ni 3+ acceptor in P-type Ni(P):SnO 2
作者:	劉正毓;Lee, Po-Ming;Wu, Yen-Ju;Hsieh, Chih-Yi;Liao, Ching-Han;Liu, Yen-Shuo;Liu, Cheng-Yi
貢獻者:	工學院化學工程與材料工程學系
關鍵詞:	Electric potential;Metal oxides;Nickel;Nickel Phosphorus;P-type;Tin dioxide;Tin oxide;Tin oxides;Transmittance;Transparent conductive film;Voltage;X-rays
日期:	2015-05-15
上傳時間:	2026-04-21 14:36:58 (UTC+8)
出版者:	Elsevier;Elsevier B.V
摘要:	摘要： •In this work, Ni and Ni(P) was doped into the SnO2 oxide to form p-type SnO2 thin film.•The Ni3+-Sn4+ substitution reaction produces electrical holes overwhelming the free electrons generated by oxygen vacancies.•We report that Ni3+-Sn4+ substitution reaction only occurs, as P is co-doped with Ni in SnO2 thin film, which converts n-type SnO2 thin film to p-type conduction.•With the developed p-Ni(P):SnO2, transparent p-Ni(P):SnO2/i-SnO2/n-ITO p-i-n structure was fabricated and characterized: low leakage-current (8.41×10−5A at −5V), turn-on voltage (4.68eV), good transmittance (85%), and small ideality-factor (1.73). Ni dopants typically exist as Ni2+ oxidation state in metal oxides. We report that as Ni is co-doped with P in Ni(P):SnO2, P promotes Ni2+ into Ni3+, which acts as acceptor and coverts n-type SnO2 to p-type conduction. Significant hole concentration (4.5×1018cm−3) of p-type Ni(P):SnO2 can be obtained. The chemical state of Ni3+ in Ni(P):SnO2 is verified by ultra-violet and x-ray photoelectron spectroscopy. With the developed p-Ni(P):SnO2, transparent p-Ni(P):SnO2/i-SnO2/n-ITO p-i-n structure was fabricated and characterized: low leakage-current (8.41×10−5A at −5V), turn-on voltage (4.68eV), good transmittance (85%), and small ideality-factor (1.73). 出版者： Elsevier B.V 出版日期： 2015-05-15 出處： Applied surface science, 2015-05, Vol.337, p.33-37 版權： 2015 Elsevier B.V. 識別號： ISSN: 0169-4332 識別號： DOI: 10.1016/j.apsusc.2015.02.060
顯示於類別:	[化學工程與材料工程學系 ] 期刊論文

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