摘要： •The interfacial reaction of Ni nanocontacts on (110)Si substrates was investigated.•NiSi2 is the first phase formed in the annealed Ni nanocontacts/(110)Si samples.•NiSi2 nanocontacts are anisotropic in shape and elongated along 1 1¯ 0 directions.•The approach can be used to fabricate various well-ordered silicide nanocontacts. In this study, we report on the fabrication and characterization of periodic Ni and Ni-silicide nanocontact arrays on (110)Si substrates. From transmission electron microscopy and selected-area electron diffraction analysis, it is found that the epitaxial NiSi2 is the first and the only silicide phase formed in the nanoscale Ni contact/(110)Si sample after annealing at a temperature as low as 300°C, demonstrating that the nanoscale Ni contact is more favorable for the epitaxial growth of NiSi2 phase on (110)Si. The orientation relationship between the epitaxial NiSi2 nanocontacts and the (110)Si substrate is identified as [110]NiSi2//[110]Si and (1¯ 1 1¯)NiSi2//(1¯ 1 1¯)Si. For the samples annealed at higher temperatures, all the epitaxial NiSi2 nanocontacts formed on (110)Si are anisotropic in shape and elongated along the crystallographic 1 1¯ 0 directions. The observed results can be attributed to the higher surface area to volume ratio of Ni nanocontacts and the faster growth rate along the 〈110〉 directions than along other directions. The size and periodicity of the nanocontacts can be readily controlled by adjusting the diameter of the colloidal nanosphere template. The self-assembled approach proposed here will provide the capability to fabricate other highly-ordered metal silicide nanocontact arrays and may offer potential applications in constructing silicide-based nanodevices. 出版者： Elsevier B.V 出版日期： 2015-07-15 出處： Applied surface science, 2015-07, Vol.343, p.88-93 版權： 2015 Elsevier B.V. 識別號： ISSN: 0169-4332 識別號： EISSN: 1873-5584 識別號： DOI: 10.1016/j.apsusc.2015.03.058
