高速可見光發光二極體; High speed visible light light-emissing-diode(LED)

NCUIR > College of Electrical Engineering & Computer Science > Graduate Institute of Electrical Engineering > Electronic Thesis & Dissertation > Item 987654321/10162

Please use this identifier to cite or link to this item: https://ir.lib.ncu.edu.tw/handle/987654321/10162

Title:	高速可見光發光二極體;High speed visible light light-emissing-diode(LED)
Authors:	陳正雄;Cheng-Hsiung Chen
Contributors:	電機工程研究所
Keywords:	高速;發光二極體;LED;light-emissing-diode;high speed
Date:	2007-07-06
Issue Date:	2009-09-22 12:08:02 (UTC+8)
Publisher:	國立中央大學圖書館
Abstract:	本論文針對用於短距離光纖通訊綠光波段(520nm)之高速發光二極體研究及製作。我們採用阻障層(barrier)有矽(Si)摻雜及無摻雜之複合結構來製作氮化鎵/氮化銦鎵(GaN/InGaN)多重量子井(MQW)試片，以及使用具有76μm直徑之電流侷限結構。由量測結果發現此結構具有330MHz極佳的電-光(electrical-to-optical) 3-dB頻寬，此調制速度被多重量子井的自發性複合生命時間(spontaneous recombination lifetime)所限制。一個合理的264μW耦光功率也被同時的實現在2mm直徑、0.5數值孔徑(numerical aperture)的塑膠光纖上。 We demonstrate a high-speed GaN based Light-Emitting-Diode (LED) at a wavelength of around 520nm for the application to plastic optical fiber (POF) communication. By using a combination of n-type doping and undoped InxGa1-xN/GaN based multiple-quantum-wells (MQWs), and a 76μm in diameter current-confined aperture structure we can obtain an extremely high electrical-to-optical (E-O) 3-dB bandwidth (~330MHz), which is limited by the spontaneous recombination lifetime of the MQWs. A reasonable coupled power (~185μW) can be simultaneously achieved for a 2mm in diameter POF with a 0.5 numerical aperture (N.A.).
Appears in Collections:	[Graduate Institute of Electrical Engineering] Electronic Thesis & Dissertation

Files in This Item:

File	Description	Size	Format
index.html		0Kb	HTML	766	View/Open

社群 sharing

Loading...