Evolution of the Intermetallic Compounds in Ni/Sn-2.5Ag/Ni Microbumps for Three-Dimensional Integrated Circuits

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題名:	Evolution of the Intermetallic Compounds in Ni/Sn-2.5Ag/Ni Microbumps for Three-Dimensional Integrated Circuits
作者:	吳子嘉;Hsu, H. H.;Huang, Y. T.;Huang, S. Y.;Chang, T. C.;Wu, Albert T.
貢獻者:	工學院化學工程與材料工程學系
關鍵詞:	Characterization and Evaluation of Materials;Chemistry and Materials Science;Electronics and Microelectronics;Instrumentation;Integrated circuits;Kinetics;Materials Science;Optical and Electronic Materials;Solid State Physics
日期:	2015-10-05
上傳時間:	2026-04-21 14:40:09 (UTC+8)
出版者:	Springer New York;New York: Springer Science and Business Media LLC
摘要:	摘要： Ni/Sn-2.5Ag/Ni samples were used to simulate the microbumps in three-dimensional (3D) packaging. The annealed test was adopted to observe the microstructure of intermetallic compound formation at 100°C, 125°C, and 150°C up to 1000 h. In the Ni/Sn-2.5Ag/Ni, predominant phases of layer-type Ni 3 Sn 4 and Ag 3 Sn particles could be seen under the thermal treatment. The formation of Ni 3 Sn 4 followed a parabolic rate law at each aging temperature. Due to the limited solder volume, the remaining solder of the microbump was completely exhausted after long-time annealing at 150°C. The activation energy for Ni 3 Sn 4 formation in the Ni/Sn-2.5Ag/Ni microbump was 171.8 kJ/mol. Furthermore, the consumption of the Ni under bump metallization (UBM) was estimated based on the mass balance of Ni atoms during the interfacial reaction. 其他題名： Journal of Elec Materi 出版者： New York: Springer Science and Business Media LLC 出版日期： 2015-10-01 出處： Journal of Electronic Materials, 2015-10, Vol.44 (10), p.3888-3895 資源來源： EBSCOhost OmniFile Full Text Select 版權： The Minerals, Metals & Materials Society 2015 識別號： ISSN: 0361-5235 識別號： EISSN: 1543-186X 識別號： DOI: 10.1007/s11664-015-3925-z 識別號： CODEN: JECMA5
顯示於類別:	[化學工程與材料工程學系 ] 期刊論文

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