In Situ Synchrotron X-ray Diffraction Measurement of the Strain Distribution in Si Die for the Embedded Substrates

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Title:	In Situ Synchrotron X-ray Diffraction Measurement of the Strain Distribution in Si Die for the Embedded Substrates
Authors:	吳子嘉;Hsu, Hsueh Hsien;Chen, Hao;Ouyang, Yao Tsung;Chiu, Tz Cheng;Chang, Tao Chih;Lee, Hsin Yi;Ku, Chin Shun;Wu, Albert T.
Contributors:	工學院化學工程與材料工程學系
Keywords:	3-D technology;Characterization and Evaluation of Materials;Chemistry and Materials Science;Electronics and Microelectronics;Instrumentation;Integrated circuits;Materials Science;Optical and Electronic Materials;Solid State Physics;X-rays
Date:	2015-10-05
Issue Date:	2026-04-21 14:40:14 (UTC+8)
Publisher:	Springer New York;New York: Springer US
Abstract:	摘要： Three-dimensional packaging provides an acceptable solution for miniaturized integrated circuits. Because of the technological flexibility required for combining various modules to form a functional system, miniaturization can be achieved by using embedded techniques that could enhance the reliability of assembled systems. Because the mismatch of the thermal expansion coefficient among the materials has been an emerging issue when embedded components are subjected to thermal cycles, this study adopted the in situ synchrotron x-ray method to measure the strain distribution of a Si die in embedded substrates at various temperatures ranging from 25°C to 150°C. The out-of-plane strain of the Si die became less compressive when the temperature was increased. The numerical simulation of the finite elements software ANSYS also indicated the similar consequence of the strain behavior. 其他題名： Journal of Elec Materi 出版者： New York: Springer US 出版日期： 2015-10-01 出處： Journal of electronic materials, 2015-10, Vol.44 (10), p.3942-3947 資源來源： EBSCOhost OmniFile Full Text Select 版權： The Minerals, Metals & Materials Society 2015 識別號： ISSN: 0361-5235 識別號： EISSN: 1543-186X 識別號： DOI: 10.1007/s11664-015-3780-y 識別號： CODEN: JECMA5
Appears in Collections:	[Department of Chemical and Materials Engineering] journal & Dissertation

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