High dislocation density of tin induced by electric current

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Title:	High dislocation density of tin induced by electric current
Authors:	吳子嘉;Liao, Yi-Han;Liang, Chien-Lung;Lin, Kwang-Lung;Wu, Albert T.
Contributors:	工學院化學工程與材料工程學系
Keywords:	Deflection;DENSITY;Diffraction;Dislocation density;Dislocation loops;DISLOCATIONS;ELECTRIC CURRENTS;Electron backscatter diffraction;ELECTRON DIFFRACTION;Grain refinement;MATERIALS SCIENCE;RECRYSTALLIZATION;RESOLUTION;STRESSES;TIN;TRANSMISSION ELECTRON MICROSCOPY
Date:	2015-12-01
Issue Date:	2026-04-21 14:43:10 (UTC+8)
Publisher:	Melville: American Institute of Physics
Abstract:	摘要： A dislocation density of as high as 1017 /m2 in a tin strip, as revealed by high resolution transmission electron microscope, was induced by current stressing at 6.5 x 103 A/ cm2. The dislocations exist in terms of dislocation line, dislocation loop, and dislocation aggregates. Electron Backscattered Diffraction images reflect that the high dislocation density induced the formation of low deflection angle subgrains, high deflection angle Widmanstätten grains, and recrystallization. The recrystallization gave rise to grain refining. 出版者： Melville: American Institute of Physics 出版日期： 2015-12-01 出處： AIP advances, 2015-12, Vol.5 (12), p.127210-127210-6 資源來源： Directory of Open Access Journals 版權： 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License. 識別號： ISSN: 2158-3226 識別號： EISSN: 2158-3226 識別號： DOI: 10.1063/1.4937909
Appears in Collections:	[Department of Chemical and Materials Engineering] journal & Dissertation

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