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請使用永久網址來引用或連結此文件:
https://ir.lib.ncu.edu.tw/handle/987654321/101762
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| 題名: | Study of Al-Cu compounds as soldering bond pad for high-power device packaging |
| 作者: | 劉正毓;Liu, Wei Chih;Chen, Yan Hao;Chung, Te Yuan;Liu, Cheng Yi |
| 貢獻者: | 工學院化學工程與材料工程學系 |
| 關鍵詞: | Al−Cu IMCs;Bond pad;High-power package;Soldering reaction |
| 日期: | 2015-12-01 |
| 上傳時間: | 2026-04-21 14:43:27 (UTC+8) |
| 出版者: | Elsevier Ltd.;Elsevier Ltd |
| 摘要: | 摘要: Four equilibrium phases, Al2Cu (θ), AlCu (η2), Al3Cu4 (ζ2), and Al4Cu9 (γ2) were produced by annealing the solid-state Al/Cu diffusion couples. With a proper polishing process, the above four Al−Cu compounds were fabricated as soldering substrates. We found that the pure Sn solder ball can wet properly on the Al3Cu4, Al4Cu9 substrates, but, the pure Sn solder ball cannot wet on the Al2Cu and AlCu substrates. Interestingly, Sn can wet on the Al4Cu9 substrate as well as on the Cu substrate. In addition, we found that a dark Al-rich layer formed below the interfacial Cu6Sn5 compound, which is analyzed to be an Al-rich Al4Cu9 phase. We speculate that the Al-rich Al4Cu9 layer is caused by the Sn soldering reaction. During soldering reaction with Sn, the Cu in the Al4Cu9 layer would diffuse out to react with Sn and form the Cu6Sn5 compound. The Al in the Al4Cu9 layer does not react with Sn solder, so, the Al content would stay in the Al4Cu9 substrate. X-ray photoelectron spectroscopy (XPS) analysis has verified the metallic Al phase in the dark Al layer. 出版者: Elsevier Ltd 出版日期: 2015-12-01 出處: Microelectronics and reliability, 2015-12, Vol.55 (12), p.2549-2553 資源來源: Elsevier ScienceDirect Journals Complete 版權: 2015 Elsevier Ltd 識別號: ISSN: 0026-2714 識別號: EISSN: 1872-941X 識別號: DOI: 10.1016/j.microrel.2015.08.012 |
| 顯示於類別: | [化學工程與材料工程學系 ] 期刊論文
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