High Performance Transparent Transistor Memory Devices Using Nano-Floating Gate of Polymer/ZnO Nanocomposites

NCU Institutional Repository > 工學院 > 化學工程與材料工程學系 > 期刊論文 > Item 987654321/101849

請使用永久網址來引用或連結此文件: https://ir.lib.ncu.edu.tw/handle/987654321/101849

題名:	High Performance Transparent Transistor Memory Devices Using Nano-Floating Gate of Polymer/ZnO Nanocomposites
作者:	劉振良;Shih, Chien-Chung;Lee, Wen-Ya;Chiu, Yu-Cheng;Hsu, Han-Wen;Chang, Hsuan-Chun;Liu, Cheng-Liang;Chen, Wen-Chang
貢獻者:	工學院化學工程與材料工程學系
關鍵詞:	639/301/1005/1008;639/925/357/354;Carbazole;Humanities and Social Sciences;multidisciplinary;Nanocomposites;Nanoparticles;Polymers;Random access memory;Retention time;Science;Surface plasmon resonance;Transistors;Trapping
日期:	2016-02-01
上傳時間:	2026-04-21 14:48:04 (UTC+8)
出版者:	Nature Publishing Group;London: Springer Science and Business Media LLC
摘要:	摘要： AbstractNano-floating gate memory devices (NFGM) using metal nanoparticles (NPs) covered with an insulating polymer have been considered as a promising electronic device for the next-generation nonvolatile organic memory applications NPs. However, the transparency of the device with metal NPs is restricted to 60~70% due to the light absorption in the visible region caused by the surface plasmon resonance effects of metal NPs. To address this issue, we demonstrate a novel NFGM using the blends of hole-trapping poly (9-(4-vinylphenyl) carbazole) (PVPK) and electron-trapping ZnO NPs as the charge storage element. The memory devices exhibited a remarkably programmable memory window up to 60 V during the program/erase operations, which was attributed to the trapping/detrapping of charge carriers in ZnO NPs/PVPK composite. Furthermore, the devices showed the long-term retention time (>105 s) and WRER test (>200 cycles), indicating excellent electrical reliability and stability. Additionally, the fabricated transistor memory devices exhibited a relatively high transparency of 90% at the wavelength of 500 nm based on the spray-coated PEDOT:PSS as electrode, suggesting high potential for transparent organic electronic memory devices. 其他題名： Sci Rep 出版者： London: Springer Science and Business Media LLC 出版日期： 2016-02-01 出處： Scientific Reports, 2016-02, Vol.6 (1), p.20129-20129, Article 20129 資源來源： Publicly Available Content Database 版權： The Author(s) 2016 版權： Copyright Nature Publishing Group Feb 2016 版權： Copyright © 2016, Macmillan Publishers Limited 2016 Macmillan Publishers Limited 識別號： ISSN: 2045-2322 識別號： EISSN: 2045-2322 識別號： DOI: 10.1038/srep20129 識別號： PMID: 26831222
顯示於類別:	[化學工程與材料工程學系 ] 期刊論文

文件中的檔案:

檔案	描述	大小	格式	瀏覽次數
index.html		0Kb	HTML	14	檢視/開啟

在NCUIR中所有的資料項目都受到原著作權保護.

社群 sharing

資料載入中.....